Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

SCHOTTKY BARRIER (DOUBLE) DIODES

FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package • Ultra high-speed switching • Voltage clamping • Protection circuits • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. .

丝印代码：L0；40 V, 200 mA Schottky barrier dual diode

1. General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • AEC-Q101 qualified 2.1

丝印代码：L0；Schottky barrier diodes in small packages

Features * Low forward voltage * Small SMD plastic packages * Low capacitance

丝印代码：72C；SCHOTTKY BARRIER (DOUBLE) DIODES

FEATURES Ultra high switching speed Low forward voltage Guard ring protected Small plastic SMD package Ultra high-speed switching Voltage clamping Protection circuits Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . Halogen Free)

0.2A,40V,Surface Mount Small Signal Schottky Diodes

肖特基二极管

Small Signal Schottky

Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages.

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丝印代码：L0；40 V, 200 mA Schottky barrier dual diode

1. General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AEC-Q101 and

丝印代码：L0；40 V, 200 mA Schottky barrier dual diode

1. General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AEC-Q101 and

40 V, 200 mA Schottky barrier dual diode

1. General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AEC-Q101 and

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 40V SOT23 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：SCHOTTKY BARRIER (DOUBLE) DIODES 分立半导体产品 二极管 - 整流器 - 阵列

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

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