Silicon Schottky Diode

Silicon Schottky Diode • RF Schottky diode for mixer applications up to 26 GHz • Extremely low inductance combined with ultra low device capacitance • Very stable performance for all major parameters • Package size: 0.62 x 0.31 x 0.31 mm³ only • Pb-free (RoHS compliant) package

RF 混频器和探测器肖特基二极管

英飞凌射频肖特基二极管是一种硅低势垒 N 型器件，片上带有集成保护环，用于过压保护。其低势垒高度、小正向电压二极管和低结电容，使 BAT24 - 02LS 成为频率高达 24 GHz 的应用中混频器和检测器功能的合适选择 • 低电感 LS = 0.2 nH（典型值）\n• TSSLP-2-1 封装（0.62 mm x 0.32 mm x 0.31 mm），尺寸为 0201\n• 无铅（符合 RoHS 标准）和无卤素;

Silicon Schottky Diode

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Silicon Schottky Diode

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丝印代码：S；Single silicon Schottky diode

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AQxx-02HTG Series 500W TVS Diode Array

Description The AQxx-02HTG Series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. This AQxx series can safely absorb repetitive ESD strikes of ±30 kV (contact and air

丝印代码：M24；400W TVS Diode Array

Description The SM series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. The SM series can absorb repetitive ESD strikes above the maximum level specifed in the IEC 61000