RF 混频器和探测器肖特基二极管

这款英飞凌射频肖特基二极管是一款硅低势垒 N 型器件，片上集成有保护环，可提供过压保护。其低势垒高度、小正向电压和低结电容使 BAT24-02ELS 成为频率高达 24 GHz 的应用中混频器和检测器功能的合适选择。 • 低电感 LS = 0.2 nH（典型值）\n• TSSLP-2-3 封装（0.62 mm x 0.32 mm x 0.31 mm），占位面积为 0201\n• 无铅、符合 RoHS 标准且无卤素;

丝印代码：S；Single silicon Schottky diode

文件：349.44 Kbytes Page：11 Pages

Silicon Schottky Diode

Silicon Schottky Diode • RF Schottky diode for mixer applications up to 26 GHz • Extremely low inductance combined with ultra low device capacitance • Very stable performance for all major parameters • Package size: 0.62 x 0.31 x 0.31 mm³ only • Pb-free (RoHS compliant) package

Silicon Schottky Diode

文件：578.4 Kbytes Page：6 Pages

AQxx-02HTG Series 500W TVS Diode Array

Description The AQxx-02HTG Series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. This AQxx series can safely absorb repetitive ESD strikes of ±30 kV (contact and air

丝印代码：M24；400W TVS Diode Array

Description The SM series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. The SM series can absorb repetitive ESD strikes above the maximum level specifed in the IEC 61000