High-speed double diode

DESCRIPTION The BAS56 consists of two highspeed switching diodes fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT143 package. The diodes are not connected. FEATURES • Small plastic SMD package • High switching speed: max. 6 ns • Continuous reverse vol

DUAL HIGH CURRENT SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high current, high speed switching applications. Marking code is L51.

High-Speed Double Diode

Features ● Small plastic SMD package ● High switching speed: max. 6 ns ● Continuous reverse voltage:max. 60 V ● Repetitive peak reverse voltage:max. 60 V ● Repetitive peak forward current:max. 600 mA.

High-speed double diode

High-speed Double Diode

High-speed Double Diode Features High switching speed. Continuous reverse voltage. Repetitive peak reverse voltage. Pepetitive peak forward current. Applications High speed switching in e.g.surface mounted circuits.

High-speed double diode

1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected. 1.2 Features and benefits High switching speed: trr ≤ 6 ns Reverse voltage: VR ≤ 60 V R

High-speed double diode

封装/外壳：TO-253-4，TO-253AA 包装：管件 描述：DIODE SWITCHING DUAL SOT143 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY GP 60V 200MA SOT143B 分立半导体产品 二极管 - 整流器 - 阵列

SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES

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High-speed double diode

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HIGH CURRENT SILICON SWITCHING DIODES

文件：427.66 Kbytes Page：2 Pages