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BAS521价格
参考价格：￥0.0841
型号：BAS521,115 品牌：NXP 备注：这里有BAS521多少钱，2026年最近7天走势，今日出价，今日竞价，BAS521批发/采购报价，BAS521行情走势销售排行榜，BAS521报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BAS521 | High voltage switching diode DESCRIPTION The BAS521 is a high-voltage switching diode fabricated in planar technology and encapsulated in an ultra small SOD523 (SC-79) plastic SMD package. FEATURES • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Repetitive peak forward current: 625 mA • Ult | PHILIPS 飞利浦 |   | |
BAS521 | HIGH VOLTAGE SWITCHING DIODE HIGH VOLTAGE SWITCHING DIODE High Speed and High Voltage Switching Diode | CDIL | | |
BAS521 | HIGH VOLTAGE SWITCHING DIODE Features • Fast Switching Speed: max. 50 ns • High Reverse Breakdown Voltage: 300V • Low Leakage Current: 100nA at room temperature • Ultra Small Plastic SMD Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) | DIODES 美台半导体 | | |
BAS521 | High voltage switching diode | ETC 知名厂家 | ETC | |
BAS521 | Switching Diodes ■ Features ● High switching speed: trr ≤ 50 ns ● High reverse voltage: VR ≤ 300 V ● Repetitive peak forward current: IFRM ≤ 1 A ● High-speed switching ● High-voltage switching | KEXIN 科信电子 | | |
BAS521 | High voltage switching diode DESCRIPTION The BAS521 is a high-voltage switching diode fabricated in planar technology and encapsulated in an ultra small SOD523 (SC-79) plastic SMD package. FEATURES • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Repetitive peak forward current: 625 mA • Ult | LUGUANG 鲁光电子 | | |
BAS521 | 丝印代码：L4；Single high-voltage switching diode 1. General description Single high-voltage switching diode, fabricated in planar technology, and encapsulated in a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • High reverse voltage: VR ≤ 300 V • Repe | NEXPERIA 安世 | | |
BAS521 | Schottky barrier diode Features *Fast switching speed *High conductance | TECHPUBLIC 台舟电子 | | |
BAS521 | Switching Diode | DIODES 美台半导体 | | |
BAS521 | 丝印代码：4P；HIGH VOLTAGE SWITCHING DIODE 文件：352.44 Kbytes Page：5 Pages | RECTRON 丽正国际 | | |
HIGH VOLTAGE SWITCHING DIODE Features • Fast Switching Speed: max. 50 ns • High Reverse Breakdown Voltage: 300V • Low Leakage Current: 100nA at room temperature • Ultra Small Plastic SMD Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) | DIODES 美台半导体 | | ||
丝印代码：S2；High-voltage switching diode 1. General description High-voltage switching diode, in an ultra small SOD523 (SC-72) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage: VR ≤ 200 V • Low capacitanc | NEXPERIA 安世 | | ||
HIGH VOLTAGE SWITCHING DIODE Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature • Ultra Small Plastic SMD Package: 1.0mm x 0.6mm x 0.5mm • Totally Lead-Free & Fully RoHS | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature • Ultra Small Plastic SMD Package: 1.0mm x 0.6mm x 0.5mm • Totally Lead-Free & Fully RoHS | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE Features Fast Switching Speed: max. 50 ns High Reverse Breakdown Voltage: 300V Low Leakage Current: 100nA at room temperature Ultra Small Plastic SMD Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to | DIODES 美台半导体 | | ||
丝印代码：L4；High-voltage switching diode 1. General description High-voltage switching diode, encapsulated in an ultra small SOD523 (SC-79) flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • High reverse voltage: VR ≤ 300 V • Repetitive peak forward current: IFR | NEXPERIA 安世 | | ||
丝印代码：99；HIGH VOLTAGE SWITCHING DIODE Features Fast Switching Speed: max. 50 ns High Reverse Breakdown Voltage: 300V Low Leakage Current: 100nA at room temperature Ultra Small Plastic SMD Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to | DIODES 美台半导体 | | ||
丝印代码：99；HIGH VOLTAGE SWITCHING DIODE Features Fast Switching Speed: max. 50 ns High Reverse Breakdown Voltage: 300V Low Leakage Current: 100nA at room temperature Ultra Small Plastic SMD Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to | DIODES 美台半导体 | | ||
High Voltage Switching Diode High Voltage Switching Diode Applications • high speed switching • high voltage switching | SEMTECH_ELEC 先之科半导体 | | ||
High Voltage Switching Diode Features • AEC-Q101 Qualified • Small surface mounting type • High speed • Suitable for high packing density • High voltage capability • Halogen and Antimony Free(HAF), RoHS compliant Application • Ultra high speed switching | HUIXIN 慧芯电子 | | ||
High Voltage Switching Diode Applications • high speed switching • high voltage switching | GWSEMI 唯圣电子 | | ||
封装/外壳：SC-79，SOD-523 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 300V 250MA SOD523 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
封装/外壳：SC-79，SOD-523 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 300V 250MA SOD523 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
HIGH VOLTAGE SWITCHING DIODE 文件：78.15 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：78.15 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：78.15 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
Switching Diode | FORMOSA 美丽微半导体 | | ||
Small Signal Switching Diodes | COMCHIP 典琦 | | ||
SMD Switching Diodes 文件：526.94 Kbytes Page：4 Pages | COMCHIP 典琦 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：87.26 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：87.26 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：120.97 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：120.97 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：87.26 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：87.26 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：120.97 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：359.53 Kbytes Page：5 Pages | RECTRON 丽正国际 | | ||
丝印代码：a；High Voltage Switching Diode 文件：484.7 Kbytes Page：3 Pages | SEMTECH_ELEC 先之科半导体 | | ||
High Voltage Switching Diode 文件：484.7 Kbytes Page：3 Pages | SEMTECH_ELEC 先之科半导体 | | ||
4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS Plastic Medium-Power NPN Silicon Transistor . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • Complementary to | MOTOROLA 摩托罗拉 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing | PANASONIC 松下 | |
BAS521产品属性
- 类型
描述
- 型号
BAS521
- 功能描述
二极管 - 通用，功率，开关 Switching 300V 250mA
- RoHS
否
- 制造商
STMicroelectronics
- 产品
Switching Diodes
- 峰值反向电压
600 V
- 正向连续电流
200 A
- 最大浪涌电流
800 A
- 恢复时间
2000 ns
- 正向电压下降
1.25 V
- 最大反向漏泄电流
300 uA
- 安装风格
SMD/SMT
- 封装/箱体
ISOTOP
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+ |
7589 |
全新原装现货,支持排单订货,可含税开票 |
|||||
Nexperia |
25+ |
SOD-523-2 |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
恩XP |
1845+ |
SOD-523 |
1600 |
||||
NEXPERIA/安世 |
25+ |
SOD523 |
600000 |
NEXPERIA/安世全新特价BAS521BX即刻询购立享优惠#长期有排单订 |
|||
恩XP |
24+ |
SOD523 |
56000 |
一级代理/全新现货/长期供应! |
|||
扬杰 |
25+ |
SOD-523 |
10000 |
扬杰原厂一级代理商,价格优势! |
|||
原装DIODES |
23+ |
SOD-523 |
23510 |
公司优势库存热卖全新原装!欢迎来电 |
|||
恩XP |
SOD-523 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
NEXPERIA B.V. |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
Nexperia/安世 |
25+ |
SOD523 |
30000 |
全新原包原盘，有挂有货，假一赔十 |
BAS521规格书下载地址
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BAS521数据表相关新闻
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BAS40E6327 製造商: Infineon 產品類型: 肖特基二極體及整流器 RoHS: 詳細資料 產品: Schottky Diodes 安裝風格: SMD/SMT 封裝/外殼: SOT-23-3 配置: Single 技術: Si If - 順向電流: 120 mA Vf - 順向電壓: 1 V Ifsm - 順向浪湧電流: 200 mA Ir - 反向電流: 1 uA 最低工作溫度: - 55 C 最高工
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