位置:首页 > IC中文资料 > BAS521LP

BAS521LP价格

参考价格:¥0.2335

型号:BAS521LP-7 品牌:Diodes 备注:这里有BAS521LP多少钱,2026年最近7天走势,今日出价,今日竞价,BAS521LP批发/采购报价,BAS521LP行情走势销售排行榜,BAS521LP报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BAS521LP

HIGH VOLTAGE SWITCHING DIODE

Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature • Ultra Small Plastic SMD Package: 1.0mm x 0.6mm x 0.5mm • Totally Lead-Free & Fully RoHS

DIODES

美台半导体

BAS521LP

HIGH VOLTAGE SWITCHING DIODE

文件:87.26 Kbytes Page:4 Pages

DIODES

美台半导体

BAS521LP

Switching Diode

DIODES

美台半导体

HIGH VOLTAGE SWITCHING DIODE

Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature • Ultra Small Plastic SMD Package: 1.0mm x 0.6mm x 0.5mm • Totally Lead-Free & Fully RoHS

DIODES

美台半导体

HIGH VOLTAGE SWITCHING DIODE

•Fast Switching Speed: Maximum of 50ns\n•Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature\n•Totally Lead-Free & Fully RoHS Compliant\n•Qualified to AEC-Q101 Standards for High Reliability\n•PPAP Capable;

DIODES

美台半导体

HIGH VOLTAGE SWITCHING DIODE

文件:87.26 Kbytes Page:4 Pages

DIODES

美台半导体

HIGH VOLTAGE SWITCHING DIODE

文件:120.97 Kbytes Page:4 Pages

DIODES

美台半导体

HIGH VOLTAGE SWITCHING DIODE

文件:120.97 Kbytes Page:4 Pages

DIODES

美台半导体

HIGH VOLTAGE SWITCHING DIODE

文件:87.26 Kbytes Page:4 Pages

DIODES

美台半导体

HIGH VOLTAGE SWITCHING DIODE

文件:87.26 Kbytes Page:4 Pages

DIODES

美台半导体

HIGH VOLTAGE SWITCHING DIODE

文件:120.97 Kbytes Page:4 Pages

DIODES

美台半导体

封装/外壳:0402(1006 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE GEN PURP 325V 400MA 2DFN 分立半导体产品 二极管 - 整流器 - 单

DIODES

美台半导体

封装/外壳:0402(1006 公制) 包装:管件 描述:DIODE GP 325V 400MA X1-DFN1006-2 分立半导体产品 二极管 - 整流器 - 单

DIODES

美台半导体

4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS

Plastic Medium-Power NPN Silicon Transistor . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • Complementary to

MOTOROLA

摩托罗拉

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

PANASONIC

松下

BAS521LP产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    BAS521LPQ

  • Configuration:

    Single

  • Polarity:

    Anode

  • Power Rating:

    400 mW

  • ESD Diodes:

    No Y/N

  • Peak Repetitive Reverse Voltage VRRM:

    325 V

  • Reverse Recovery Time trr:

    50 ns

  • Maximum Average Rectifier Current IO:

    400 mA

  • Maximum Peak Forward Surge Current IFSM:

    8 A

  • Forward Voltage Drop VF @ IF:

    1.1 mA

  • Maximum Reverse Current IR:

    0.15 µA

  • Maximum Reverse Current IR @ VR:

    325 V

  • V(BR)R (V) Min @IR=100μA:

    300

  • Total Capacitance CT:

    5 pF

  • VF(V) Max @ IF=1.0mA:

    N/A

  • VF(V) Max @ IF=10mA:

    N/A

  • VF(V) Max @ IF=100mA:

    1

  • IR(nA) Max @ VR=5V:

    N/A

  • IR(uA) Max @ VR=30V:

    N/A

  • IR(uA) Max @ VR=80V:

    150nA@250V

  • Packages:

    X1-DFN1006-2

更新时间:2026-5-20 12:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
2016+
SOD523
6000
只做原装,假一罚十,公司可开17%增值税发票!
Diodes(美台)
2511
标准封装
12000
电子元器件采购降本30%!原厂直采,砍掉中间差价
DIODES/美台
25+
NA
30000
房间原装现货特价热卖,有单详谈
DIODES/美台
2023+
DFN1006-2
31152
一级代理优势现货,全新正品直营店
DIODES
19+
DFN
20000
原装需要可订货
Diodes(美台)
26+
DFN-2(0.6x1)
10548
原厂订货渠道,支持账期,一站式服务!
DIODES(美台)
25+
DFN-2(1x0.6)
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES(美台)
25+
X1-DFN1006-2
9000
只做原装正品 有挂有货 假一赔十
DIODES/美台
22+
DFN10062
12245
现货,原厂原装假一罚十!
DIODES/美台
24+
X1-DFN1006-2
6000
全新原装深圳仓库现货有单必成

BAS521LP芯片相关品牌

BAS521LP数据表相关新闻

  • BAS70W原装现货放心询

    BAS70W原装现货放心询

    2025-1-2
  • BAS40-05WH6327

    进口代理

    2023-8-24
  • BAT 165 E6327

    进口代理

    2023-3-30
  • BAS40E6327

    BAS40E6327 製造商: Infineon 產品類型: 肖特基二極體及整流器 RoHS: 詳細資料 產品: Schottky Diodes 安裝風格: SMD/SMT 封裝/外殼: SOT-23-3 配置: Single 技術: Si If - 順向電流: 120 mA Vf - 順向電壓: 1 V Ifsm - 順向浪湧電流: 200 mA Ir - 反向電流: 1 uA 最低工作溫度: - 55 C 最高工

    2021-6-24
  • BAS40-07E6327

    BAS40-07E6327

    2021-3-23
  • BAT-02LRH

    BAT-02LRH,全新原装当天发货或门市自取0755-82732291,

    2019-3-22