BAS521LP价格
参考价格：￥0.2335
型号：BAS521LP-7 品牌：Diodes 备注：这里有BAS521LP多少钱，2026年最近7天走势，今日出价，今日竞价，BAS521LP批发/采购报价，BAS521LP行情走势销售排行榜，BAS521LP报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BAS521LP | HIGH VOLTAGE SWITCHING DIODE Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature • Ultra Small Plastic SMD Package: 1.0mm x 0.6mm x 0.5mm • Totally Lead-Free & Fully RoHS | DIODES 美台半导体 |   | |
BAS521LP | HIGH VOLTAGE SWITCHING DIODE 文件：87.26 Kbytes Page：4 Pages | DIODES 美台半导体 | | |
BAS521LP | Switching Diode | DIODES 美台半导体 | | |
HIGH VOLTAGE SWITCHING DIODE Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature • Ultra Small Plastic SMD Package: 1.0mm x 0.6mm x 0.5mm • Totally Lead-Free & Fully RoHS | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE •Fast Switching Speed: Maximum of 50ns\n•Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature\n•Totally Lead-Free & Fully RoHS Compliant\n•Qualified to AEC-Q101 Standards for High Reliability\n•PPAP Capable; | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：87.26 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：120.97 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：120.97 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：87.26 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：87.26 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE SWITCHING DIODE 文件：120.97 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
封装/外壳：0402（1006 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 325V 400MA 2DFN 分立半导体产品 二极管 - 整流器 - 单 | DIODES 美台半导体 | | ||
封装/外壳：0402（1006 公制） 包装：管件 描述：DIODE GP 325V 400MA X1-DFN1006-2 分立半导体产品 二极管 - 整流器 - 单 | DIODES 美台半导体 | | ||
4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS Plastic Medium-Power NPN Silicon Transistor . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • Complementary to | MOTOROLA 摩托罗拉 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing | PANASONIC 松下 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing | PANASONIC 松下 | |
BAS521LP产品属性
- 类型
描述
- Automotive Compliant PPAP：
BAS521LPQ
- Configuration：
Single
- Polarity：
Anode
- Power Rating：
400 mW
- ESD Diodes：
No Y/N
- Peak Repetitive Reverse Voltage VRRM：
325 V
- Reverse Recovery Time trr：
50 ns
- Maximum Average Rectifier Current IO：
400 mA
- Maximum Peak Forward Surge Current IFSM：
8 A
- Forward Voltage Drop VF @ IF：
1.1 mA
- Maximum Reverse Current IR：
0.15 µA
- Maximum Reverse Current IR @ VR：
325 V
- V(BR)R (V) Min @IR=100μA：
300
- Total Capacitance CT：
5 pF
- VF(V) Max @ IF=1.0mA：
N/A
- VF(V) Max @ IF=10mA：
N/A
- VF(V) Max @ IF=100mA：
1
- IR(nA) Max @ VR=5V：
N/A
- IR(uA) Max @ VR=30V：
N/A
- IR(uA) Max @ VR=80V：
150nA@250V
- Packages：
X1-DFN1006-2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES(美台) |
25+ |
X1-DFN1006-2 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
DIODES |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
DIODES/美台 |
23+ |
DFN10062 |
12730 |
原装正品代理渠道价格优势 |
|||
26+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
DIODES/美台 |
20+ |
SMD |
88800 |
DIODES原装优势主营型号-可开原型号增税票 |
|||
DIODES |
24+ |
DFN |
63200 |
一级代理/放心采购 |
|||
DIODES/美台 |
23+ |
DFN10062 |
9000 |
原装正品假一罚百!可开增票! |
|||
DIODES/美台 |
24+ |
X1-DFN1006-2 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
DIODES/美台 |
25+ |
X1-DFN1006-2 |
12700 |
买原装认准中赛美 |
|||
DIODES |
24+ |
N/A |
2486662 |
原装原装原装 |
BAS521LP规格书下载地址
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DdatasheetPDF页码索引
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