Low-leakage diode

FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS • Low-leakage current application

丝印代码：D4；Small-Signal Fast Switching Diodes

FEATURES VR 100V IFAV 200mA

Low-leakage diode

丝印代码：D4；Low-leakage diode

1. General description Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. 2. Features and benefits • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 us • Continuous reverse voltage: max. 75

封装/外壳：SC-76，SOD-323 包装：管件 描述：DIODE GEN PURP 100V 200MA SOD323 分立半导体产品 二极管 - 整流器 - 单

丝印代码：S4；Low-leakage double diode

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Low-leakage diode

肖特基

小信号开关二极管

Ultra High Speed Switching Diodes

丝印代码：D4.；Small-Signal Fast Switching Diodes

Features - Fast switching speed. - Low leakage current.

丝印代码：D4；Low-leakage switching diode

1. General description Epitaxial, medium-speed switching diode with a low-leakage current encapsulated in a small SOD323 SMD plastic package. 2. Features and benefits • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 us • Continuous reverse voltage: max. 75

Low-leakage diode

Low-leakage diode

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封装/外壳：SC-76，SOD-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 75V 200MA SOD323 分立半导体产品 二极管 - 整流器 - 单

丝印代码：S4；Low-leakage double diode

文件：496.93 Kbytes Page：7 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■ S

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON

Dual Low-Power, 120MHz Op Amp

文件：167.92 Kbytes Page：6 Pages

Dual Low-Power, 120MHz Op Amp

文件：167.92 Kbytes Page：6 Pages

3.0 mm X 7.0 mm Series

文件：32.159 Kbytes Page：1 Pages