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BAS40_05价格
参考价格:¥0.1674
型号:BAS40-05 品牌:Taiwan Semi 备注:这里有BAS40_05多少钱,2024年最近7天走势,今日出价,今日竞价,BAS40_05批发/采购报价,BAS40_05行情走势销售排行榜,BAS40_05报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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BAS40_05 | SurfaceMountSchottkyBarrierSingle/DoubleDiodes 文件:143.2 Kbytes Page:2 Pages | DiotecDIOTEC 德欧泰克 | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low | DIODESDiodes Incorporated 达尔科技 | |||
SurfacemountSchottky-BarrierSingle-/Double-Diodes Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Polarityprotection Commercialgrade1) MechanicalData1) Tapedandre | DiotecDIOTEC 德欧泰克 | |||
Surfacemountschottkybarrierdiode Surfacemountschottkybarrierdiode FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
TECHNICALSPECIFICATIONSOFSURFACEMOUNTSCHOTTKYBARRIERDIODES VOLTAGE-40VoltsCURRENT-0.2Ampere FEATURES *Forgeneralpurposeapplications *Lowforwardvoltagedrop. *Fastswitchingtime. *ProtectedbyaPNjunctionguardringagainstexcessive voltage,suchaselectrostaticdischarge(ESD). | DCCOMDc Components 直流元件直流元件有限公司 | |||
General-purposediodeforhigh-speedswitching SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODES SMALLSIGNALSCHOTTKYDIODES0mAMPERES2040VOLTS DESCRIPTION Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhand | PACELEADERPACELEADER 霈峯霈峯實業有限公司 | |||
SchottkyDiodes ■Features ●LowForwardVoltage ●FastSwitching | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SCHOTTKYBARRIERDIODE SOT-23Plastic-EncapsulateDiodes FEATURES ●LowForwardVoltage ●FastSwitching | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
Surfacemountschottkybarrierdiode FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping. | DSK Diode Semiconductor Korea | |||
200mASurfaceMountSmallSignalDiodes ■Features •Lowcurrentrectificationandhighspeedswitching. •Smallsurfacemounttype. •Upto200mAcurrentcapability. •Lowforwardvoltagedrop(VF=1.00Vtyp.@40mA). •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-freepart,ex.BAS40G. •Le | ||||
SurfaceMountSchottkyBarrierDiode Features ◇Lowturn-onvoltage ◇Fastswitching ◇PNjunctionguardRingfortransient | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
LowForwardVoltageDrop,FastSwitching FEATURES ●LowForwardVoltageDrop. ●FastSwitching. ●PNJunctionGuardRingforTransientand ESDProtection. | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
General-purposeSchottkydiodes Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Schottkybarrierdoublediodes DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable.ThediodesBAS40,BAS40-04,BAS40-05andBAS40-06areencapsulatedinaSOT23smallplasticSMDpackage.TheBAS40-07isencapsulat | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SurfaceMountSchottkyBarrierDiodes Features ●LowTurn–onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESD Protection Applications Fastswitchesinthickandthinfilmcircuits | VishayVishay Siliconix 威世科技 | |||
SiliconSchottkyDiodes(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclamping) HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending | SIEMENS Siemens Ltd | |||
SchottkyDiodes FEATURES ♦Thesediodesfeatureverylowturn-on voltageandfastswitching. ♦ThesedevicesareprotectedbyaPN junctionguardringagainstexcessive voltage,suchaselectrostaticdischarges. | GE GE Industrial Company | |||
SiliconSchottkyDiode SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SurfaceMountSchottkyBarrierDiodes Description: Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimite | WEITRONWEITRON 威堂電子科技 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection | DIODESDiodes Incorporated 达尔科技 | |||
SCHOTTKYDIODE FEATURES Powerdissipation PD:200mW(Tamb=25℃) ForwardCurrent IF:200mA ReverseVoltage VR:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | |||
SurfaceMountSchottkyBarrierDiode200mWatt DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SCHOTTKYDIODE FEATURES ●LowForwardVoltage ●FastSwitching | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
200mW,LowVF,SMDSchottkyBarrierDiode FEATURES -Metal-on-siliconschottkybarrier -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PackingcodewithsuffixGmeans greencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
General-purposeSchottkydiodes Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •Lowforwardvoltage •Fastswitching | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
Plastic-EncapsulateDiodes Plastic-EncapsulateDiodes FEATURES •LowForwardVoltage •FastSwitching | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low | DIODESDiodes Incorporated 达尔科技 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection | DIODESDiodes Incorporated 达尔科技 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection | DIODESDiodes Incorporated 达尔科技 | |||
SchottkyBarrierDiode Features Highreliability Smallmoldtype LowVF Application Smallcurrentrectification Structure Epitaxialplanar | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SchottkyBarrierDiode Features Highreliability Smallmoldtype LowVF Application Smallcurrentrectification Structure Epitaxialplanar | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
General-purposedualSchottkydiode 1.Generaldescription General-purposedualSchottkydiodeinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andreco | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
SOT-523Plastic-EncapsulateDiodes FEATURES Lowforwardvoltage Fastswitching | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SCHOTTKYBARRIERDIODE SCHOTTKYBARRIERDIODE FEATURES ●Lowforwardvoltage ●Fastswitching | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
SurfaceMountSchottkyBarrierRectifiers FEATURES •LowTurn-onvoltage •Fastswitching | SECOS SeCoS Halbleitertechnologie GmbH | |||
SurfaceMountSchottkyBarrierDiodes Features ◇Lowforwardvoltagedrop. ◇Fastswitching. ◇Ultra-smallsurfacemountpackage. ◇PNjunctionguardringfortransientand ◇ESDprotection. Applications ◇Generalpurposeswitchingapplication. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
SurfaceMountSchottkyDiodes Features: *Lowforwardvoltage *Fastswitching *Ultra-SmallSurfaceMountPackage | WEITRONWEITRON 威堂電子科技 | |||
150mW40VoltPlastic-EncapsulateDiode Features •PowDissipationPD=150mWTamb=25°C •ForwardCurrentIF=200mA •ReverseVoltageVR=40V •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features ●LowForwardVoltageDrop ●FastSwitching ●Ultra-SmallSurfaceMountPackage ●PNJunctionGuardRingforTransientandESDProtection ●LeadFree/RoHSCompliant(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •FastSwitching •Ultra-SmallSurfaceMountPackage •PNJunctionGuardRingforTransientandESDProtection •Lead,HalogenandAntimonyFree,RoHSCompliantGreen Device(Notes3,4and5) | DIODESDiodes Incorporated 达尔科技 | |||
SurfaceMountSchottkyBarrierDiode200mWatt DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
General-purposequadrupleSchottkydiode 1.Generaldescription General-purposequadrupleSchottkydiode,encapsulatedinaSOT666ultrasmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance 3.Applicat | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
General-purposeSchottkydiodes Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
General-purposeSchottkydiodes Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
SmallSignalSchottkyDiodes,Single&Dual Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC | VishayVishay Siliconix 威世科技 | |||
SmallSignalSchottkyDiodes,Single&Dual Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC | VishayVishay Siliconix 威世科技 | |||
SmallSignalSchottkyDiodes,Single&Dual Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC | VishayVishay Siliconix 威世科技 | |||
SURFACEMOUNTSCHOTTKYBARRIERDIODE SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •Lowforwardvoltage •Fastswitching | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
General-purposeSchottkydiodes Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
Schottkybarrierdoublediodes DESCRIPTION PlanarSchottkybarrierdiodesencapsulatedinaSOT323verysmallplasticSMDpackage.Singlediodesanddoublediodeswithdifferentpinningareavailable. FEATURES •Lowforwardvoltage •Guardringprotected •VerysmallSMDpackage •Lowdiodecapacitance. APPLICATIONS •U | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SiliconSchottkyDiode(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclamping) SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectingandmixing | SIEMENS Siemens Ltd | |||
SiliconSchottkyDiode SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
General-purposeSchottkydiodes Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
General-purposedualSchottkydiode 1.Generaldescription General-purposedualSchottkydiodeinasmallSOT323Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance 3.Applications •Ultrahigh-speedswitching •V | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
General-purposediodeforhigh-speedswitching SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
General-purposedualSchottkydiode 1.Generaldescription General-purposedualSchottkydiodeinasmallSOT323Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andrecommendedfo | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
SCHOTTKYDIODE 文件:238.59 Kbytes Page:2 Pages | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | |||
SurfaceMountSwitchingDiode 文件:1.51603 Mbytes Page:10 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd |
BAS40_05产品属性
- 类型
描述
- 型号
BAS40_05
- 制造商
DIOTEC
- 制造商全称
Diotec Semiconductor
- 功能描述
Surface Mount Schottky Barrier Single/Double Diodes
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIODES/美台 |
23+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
PHILIPS/飞利浦 |
20+ |
SOT23 |
1065000 |
全新原装现货 |
|||
NXP(恩智浦) |
23+ |
标准封装 |
22048 |
全新原装正品/价格优惠/质量保障 |
|||
Infineon(英飞凌) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
DIODES |
2016+ |
SOT23 |
15000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM/罗姆 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
DIODES/美台 |
21+ |
SOT23 |
19800 |
一站式BOM配单 |
|||
DIODES/美台 |
22+ |
Reel |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
24+ |
SOT23-3 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NXP/恩智浦 |
2021/2022+ |
NA |
6000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
BAS40_05规格书下载地址
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BAS40_05数据表相关新闻
BAS40-05WH6327
进口代理
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可立即发货
2019-9-20BAS40-05WH6327
肖特基二极管与整流器AFSCHOTTKYDIODE
2019-8-9
DdatasheetPDF页码索引
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