BAS40_05价格

参考价格:¥0.1674

型号:BAS40-05 品牌:Taiwan Semi 备注:这里有BAS40_05多少钱,2024年最近7天走势,今日出价,今日竞价,BAS40_05批发/采购报价,BAS40_05行情走势销售排行榜,BAS40_05报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BAS40_05

SurfaceMountSchottkyBarrierSingle/DoubleDiodes

文件:143.2 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low

DIODESDiodes Incorporated

达尔科技

DIODES

SurfacemountSchottky-BarrierSingle-/Double-Diodes

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Polarityprotection Commercialgrade1) MechanicalData1) Tapedandre

DiotecDIOTEC

德欧泰克

Diotec

Surfacemountschottkybarrierdiode

Surfacemountschottkybarrierdiode FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

TECHNICALSPECIFICATIONSOFSURFACEMOUNTSCHOTTKYBARRIERDIODES

VOLTAGE-40VoltsCURRENT-0.2Ampere FEATURES *Forgeneralpurposeapplications *Lowforwardvoltagedrop. *Fastswitchingtime. *ProtectedbyaPNjunctionguardringagainstexcessive voltage,suchaselectrostaticdischarge(ESD).

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

General-purposediodeforhigh-speedswitching

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SURFACEMOUNTSCHOTTKYBARRIERDIODES

SMALLSIGNALSCHOTTKYDIODES0mAMPERES2040VOLTS DESCRIPTION Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhand

PACELEADERPACELEADER

霈峯霈峯實業有限公司

PACELEADER

SchottkyDiodes

■Features ●LowForwardVoltage ●FastSwitching

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SCHOTTKYBARRIERDIODE

SOT-23Plastic-EncapsulateDiodes FEATURES ●LowForwardVoltage ●FastSwitching

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

Surfacemountschottkybarrierdiode

FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping.

DSK

Diode Semiconductor Korea

DSK

200mASurfaceMountSmallSignalDiodes

■Features •Lowcurrentrectificationandhighspeedswitching. •Smallsurfacemounttype. •Upto200mAcurrentcapability. •Lowforwardvoltagedrop(VF=1.00Vtyp.@40mA). •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-freepart,ex.BAS40G. •Le

SurfaceMountSchottkyBarrierDiode

Features ◇Lowturn-onvoltage ◇Fastswitching ◇PNjunctionguardRingfortransient

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

LowForwardVoltageDrop,FastSwitching

FEATURES ●LowForwardVoltageDrop. ●FastSwitching. ●PNJunctionGuardRingforTransientand ESDProtection.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

General-purposeSchottkydiodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable.ThediodesBAS40,BAS40-04,BAS40-05andBAS40-06areencapsulatedinaSOT23smallplasticSMDpackage.TheBAS40-07isencapsulat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SurfaceMountSchottkyBarrierDiodes

Features ●LowTurn–onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESD   Protection Applications   Fastswitchesinthickandthinfilmcircuits

VishayVishay Siliconix

威世科技

Vishay

SiliconSchottkyDiodes(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclamping)

HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending

SIEMENS

Siemens Ltd

SIEMENS

SchottkyDiodes

FEATURES ♦Thesediodesfeatureverylowturn-on voltageandfastswitching. ♦ThesedevicesareprotectedbyaPN junctionguardringagainstexcessive voltage,suchaselectrostaticdischarges.

GE

GE Industrial Company

GE

SiliconSchottkyDiode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SurfaceMountSchottkyBarrierDiodes

Description: Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimite

WEITRONWEITRON

威堂電子科技

WEITRON

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

DIODESDiodes Incorporated

达尔科技

DIODES

SCHOTTKYDIODE

FEATURES Powerdissipation PD:200mW(Tamb=25℃) ForwardCurrent IF:200mA ReverseVoltage VR:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

SurfaceMountSchottkyBarrierDiode200mWatt

DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SCHOTTKYDIODE

FEATURES ●LowForwardVoltage ●FastSwitching

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

200mW,LowVF,SMDSchottkyBarrierDiode

FEATURES -Metal-on-siliconschottkybarrier -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PackingcodewithsuffixGmeans greencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

General-purposeSchottkydiodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •Lowforwardvoltage •Fastswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

Plastic-EncapsulateDiodes

Plastic-EncapsulateDiodes FEATURES •LowForwardVoltage •FastSwitching

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low

DIODESDiodes Incorporated

达尔科技

DIODES

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

DIODESDiodes Incorporated

达尔科技

DIODES

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

DIODESDiodes Incorporated

达尔科技

DIODES

SchottkyBarrierDiode

Features Highreliability Smallmoldtype LowVF Application Smallcurrentrectification Structure Epitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SchottkyBarrierDiode

Features Highreliability Smallmoldtype LowVF Application Smallcurrentrectification Structure Epitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

General-purposedualSchottkydiode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andreco

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SOT-523Plastic-EncapsulateDiodes

FEATURES Lowforwardvoltage Fastswitching

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SCHOTTKYBARRIERDIODE

SCHOTTKYBARRIERDIODE FEATURES ●Lowforwardvoltage ●Fastswitching

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

SurfaceMountSchottkyBarrierRectifiers

FEATURES •LowTurn-onvoltage •Fastswitching

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

SurfaceMountSchottkyBarrierDiodes

Features ◇Lowforwardvoltagedrop. ◇Fastswitching. ◇Ultra-smallsurfacemountpackage. ◇PNjunctionguardringfortransientand ◇ESDprotection. Applications ◇Generalpurposeswitchingapplication.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SurfaceMountSchottkyDiodes

Features: *Lowforwardvoltage *Fastswitching *Ultra-SmallSurfaceMountPackage

WEITRONWEITRON

威堂電子科技

WEITRON

150mW40VoltPlastic-EncapsulateDiode

Features •PowDissipationPD=150mWTamb=25°C •ForwardCurrentIF=200mA •ReverseVoltageVR=40V •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ●LowForwardVoltageDrop ●FastSwitching ●Ultra-SmallSurfaceMountPackage ●PNJunctionGuardRingforTransientandESDProtection ●LeadFree/RoHSCompliant(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features •LowForwardVoltageDrop •FastSwitching •Ultra-SmallSurfaceMountPackage •PNJunctionGuardRingforTransientandESDProtection •Lead,HalogenandAntimonyFree,RoHSCompliantGreen Device(Notes3,4and5)

DIODESDiodes Incorporated

达尔科技

DIODES

SurfaceMountSchottkyBarrierDiode200mWatt

DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

General-purposequadrupleSchottkydiode

1.Generaldescription General-purposequadrupleSchottkydiode,encapsulatedinaSOT666ultrasmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance 3.Applicat

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

General-purposeSchottkydiodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

General-purposeSchottkydiodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

SmallSignalSchottkyDiodes,Single&Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技

Vishay

SmallSignalSchottkyDiodes,Single&Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技

Vishay

SmallSignalSchottkyDiodes,Single&Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技

Vishay

SURFACEMOUNTSCHOTTKYBARRIERDIODE

SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •Lowforwardvoltage •Fastswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

General-purposeSchottkydiodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdiodesencapsulatedinaSOT323verysmallplasticSMDpackage.Singlediodesanddoublediodeswithdifferentpinningareavailable. FEATURES •Lowforwardvoltage •Guardringprotected •VerysmallSMDpackage •Lowdiodecapacitance. APPLICATIONS •U

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SiliconSchottkyDiode(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclamping)

SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectingandmixing

SIEMENS

Siemens Ltd

SIEMENS

SiliconSchottkyDiode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

General-purposeSchottkydiodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

General-purposedualSchottkydiode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT323Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance 3.Applications •Ultrahigh-speedswitching •V

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

General-purposediodeforhigh-speedswitching

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

General-purposedualSchottkydiode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT323Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andrecommendedfo

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SCHOTTKYDIODE

文件:238.59 Kbytes Page:2 Pages

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

SurfaceMountSwitchingDiode

文件:1.51603 Mbytes Page:10 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER

BAS40_05产品属性

  • 类型

    描述

  • 型号

    BAS40_05

  • 制造商

    DIOTEC

  • 制造商全称

    Diotec Semiconductor

  • 功能描述

    Surface Mount Schottky Barrier Single/Double Diodes

更新时间:2024-5-12 23:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
23+
NA
30000
房间原装现货特价热卖,有单详谈
PHILIPS/飞利浦
20+
SOT23
1065000
全新原装现货
NXP(恩智浦)
23+
标准封装
22048
全新原装正品/价格优惠/质量保障
Infineon(英飞凌)
23+
NA/
8735
原厂直销,现货供应,账期支持!
DIODES
2016+
SOT23
15000
只做原装,假一罚十,公司可开17%增值税发票!
ROHM/罗姆
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
DIODES/美台
21+
SOT23
19800
一站式BOM配单
DIODES/美台
22+
Reel
100000
代理渠道/只做原装/可含税
INFINEON/英飞凌
24+
SOT23-3
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
NXP/恩智浦
2021/2022+
NA
6000
原厂原装现货订货价格优势终端BOM表可配单提供样品

BAS40_05芯片相关品牌

  • EON
  • Fairchild
  • FRONTIER
  • GigaDevice
  • JAUCH
  • KEC
  • KEYSIGHT
  • LIGITEK
  • MINI
  • OMRON
  • QUALTEK
  • SENSITRON

BAS40_05数据表相关新闻