Low VF Schottky Diode

Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0.5 A) • For low loss, fast-recovery protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Low VF Schottky Diode

Modular application design kit (MADK) of IM818

EVAL-M1-IM818-A is an evaluation board for motor drive applications based on a 3-phase IPM. Combined with one of the available MADK control board options, it demonstrates Infineon's IPM technology for motor drives. The kit demonstrates Infineon’s IPM technology for motor drives. Main features o

Low VF Schottky Diode

Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0.5 A) • For low loss, fast-recovery protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Low VF Schottky Diode

Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0.5 A) • For low loss, fast-recovery protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101

AF 肖特基二极管

低 VF 肖特基二极管。 • 正向电流：0.5 A\n• 非常低的正向电压（典型值）0.45 V @ IF = 0.5 A)\n• 无铅（符合 RoHS 标准）封装;

Modular application design kit (MADK) of IM818

EVAL-M1-IM818-A is an evaluation board for motor drive applications based on a 3-phase IPM. Combined with one of the available MADK control board options, it demonstrates Infineon's IPM technology for motor drives. The kit demonstrates Infineon’s IPM technology for motor drives. Main features o

封装/外壳：SC-79，SOD-523 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30V 500MA SC79-2 分立半导体产品 二极管 - 整流器 - 单

Thyratrons

Description Thyratrons are fast acting high voltage switches suitable for a variety of applications including radar, laser and scientific use. PerkinElmer’s thyratrons are constructed of ceramic and metal for strength and long life. Over 300 thyratron types are available from PerkinElmer. The t

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

30A SUPER-FAST GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Super-Fast Switching for High Efficiency ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

UHF POWER TRANSISTOR NPN SILICON

The TP3005 is designed for 960MHz base stations in bothanalog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. • Specified 26 Volts, 960 MHz Characteristics Output Power = 4.0 Watt

SDH/SONET STM1/OC3 and STM4/OC12 transceiver

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