位置：首页 > IC中文资料第5896页 > BAS21Q
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BAS21Q | Switching Diode 文件：233.86 Kbytes Page：4 Pages | YANGJIE 扬杰电子 |   | |
BAS21Q | 小信号开关二极管 | YJYCOIN 益嘉源 | | |
SURFACE MOUNT FAST SWITCHING DIODE SOT23 SILICON HIGH SPEED SWITCHING DIODE | DIODES 美台半导体 | | ||
SURFACE MOUNT FAST SWITCHING DIODE SOT23 SILICON HIGH SPEED SWITCHING DIODE | DIODES 美台半导体 | | ||
High-voltage switching diode 1. General description High-voltage switching diode, encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 n | NEXPERIA 安世 | | ||
High-voltage switching diode 1. General description High-voltage switching diode, encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 n | NEXPERIA 安世 | | ||
High-voltage switching diode 1. General description High-voltage switching diode, encapsulated in an ultra small DFN1110D-3 (SOT8015, JEDEC MO340-BA) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • Hig | NEXPERIA 安世 | | ||
High-voltage switching diode 1. General description High-voltage switching diode, encapsulated in an ultra small DFN1110D-3 (SOT8015, JEDEC MO340-BA) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • Hig | NEXPERIA 安世 | | ||
High-voltage switching diode 1. General description High-voltage switching diode, encapsulated in an ultra small DFN1412D-3 (SOT8009, JEDEC MO340-CA) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • Hig | NEXPERIA 安世 | | ||
High-voltage switching diode 1. General description High-voltage switching diode, encapsulated in an ultra small DFN1412D-3 (SOT8009, JEDEC MO340-CA) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • Hig | NEXPERIA 安世 | | ||
SURFACE MOUNT FAST SWITCHING DIODE 文件：290.21 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
SURFACE MOUNT FAST SWITCHING DIODE 文件：90.21 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
SURFACE MOUNT FAST SWITCHING DIODE 文件：90.21 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
SURFACE MOUNT FAST SWITCHING DIODE 文件：90.21 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
SURFACE MOUNT FAST SWITCHING DIODE 文件：90.21 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
SURFACE MOUNT FAST SWITCHING DIODE 文件：290.21 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：DIODE GP SW SOT23 分立半导体产品 二极管 - 整流器 - 单 | DIODES 美台半导体 | | ||
封装/外壳：3-XDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 250V 330MA 3DFN 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-voltage switching diode | NEXPERIA 安世 | | ||
High-voltage switching diode | NEXPERIA 安世 | |
BAS21Q产品属性
- 类型
描述
- 型号
BAS21Q
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
SURFACE MOUNT FAST SWITCHING DIODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
SOT-1215 |
8588 |
百分百原装正品,可原型号开票 |
|||
ROHM/罗姆 |
24+ |
QFP56 |
17860 |
公司现货库存,支持实单 |
|||
DIODES/美台 |
23+ |
SOT23 |
12700 |
买原装认准中赛美 |
|||
DIODES/美台 |
25+ |
原装 |
32000 |
DIODES/美台全新特价BAS21Q-7-F即刻询购立享优惠#长期有货 |
|||
NEXPERIA/安世 |
24+ |
原厂原封可拆样 |
65258 |
百分百原装现货,实单必成 |
|||
DIODES/美台 |
1732+ |
SOT-23-3 |
15000 |
||||
DIODES/美台 |
24+ |
SOT23 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
DIODES/美台 |
24+ |
SMD |
160425 |
明嘉莱只做原装正品现货 |
|||
DIODES |
21+ |
35999 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
DIODES/美台 |
23+ |
SOT23-3 |
50000 |
只做原装正品 |
BAS21Q规格书下载地址
BAS21Q参数引脚图相关
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DdatasheetPDF页码索引
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