Silicon Schottky Diode

Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

Silicon Schottky Diode (General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)

Silicon Schottky Diode ●General purpose diodes for high-speed switching ●Circuit protection ●Voltage clamping ●High-level detecting and mixing

Silicon Schottky Diode (General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)

AF 肖特基二极管

硅肖特基二极管 • 用于高速开关的通用二极管\n• 电压钳位\n• 无铅（符合 RoHS 标准）封装;

Silicon Schottky Diode (General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)

Silicon Schottky Diode ●General purpose diodes for high-speed switching ●Circuit protection ●Voltage clamping ●High-level detecting and mixing

丝印代码：4；Silicon Schottky Diode

Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

丝印代码：4；General-purpose diode for high-speed switching

Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

丝印代码：4；Silicon Schottky Diode

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封装/外壳：SC-76，SOD-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 40V 120MA SOD323 分立半导体产品 二极管 - 整流器 - 单

SILICON SWICHING DIODE

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Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP