75 V, low leakage diode in small SOD123F package

General description Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package. Features ■ Small and flat lead SMD plastic package ■ Low leakage current Applications ■ General-purpose switching

丝印代码：B1；Low leakage switching diode

1.1 General description Low leakage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits  Small and flat lead SMD plastic package  Low leakage current  Excellent coplanarity and improved thermal behavior

Low leakage switching diode

Low leakage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. • Small and flat lead SMD plastic package\n• Low leakage current\n• Excellent coplanarity and improved thermal behavior\n• AEC-Q101 qualified;

低漏失型开关二极管 (AEC-Q101标准)

为支持现有客户而生产的产品。不对新设计出售此产品。 • High reliability\n• Small mold type;

丝印代码：D8U；Switching Diode (Low leakage)

Features High reliability Small mold type Low IR Application General switching Structure Epitaxial planar

丝印代码：D8U；Switching Diode (Low leakage)

Features High reliability Small mold type Low IR Application General switching Structure Epitaxial planar

Switching Diode

文件：1.05113 Mbytes Page：6 Pages

Switching Diode

文件：1.05161 Mbytes Page：6 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：HIGH RELIABILITY AUTOMOTIVE SWIT 分立半导体产品 二极管 - 整流器 - 单

小信号开关二极管

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：LOW-LEAKAGE, 80V, 215MA, SOT-23, 分立半导体产品 二极管 - 整流器 - 单

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS