丝印代码：D8U；Switching Diode (Low leakage)

Features High reliability Small mold type Low IR Application General switching Structure Epitaxial planar

低漏失型, 80V, 215mA, SOT-23, 单, 开关二极管

BAS116HY是低IR的开关二极管。适合一般开关用途。 • High reliability\n• Small mold type\n• Low IR;

低漏失型, 80V, 215mA, SOT-23, 单, 车载用开关二极管

BAS116HYFH是低IR的开关二极管。适合一般开关用途。是符合AEC-Q101标准的高可靠性产品。 • High reliability\n• Small mold type\n• Low IR;

丝印代码：D8U；Switching Diode (Low leakage)

Features High reliability Small mold type Low IR Application General switching Structure Epitaxial planar

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：LOW-LEAKAGE, 80V, 215MA, SOT-23, 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：LOW-LEAKAGE, 80V, 215MA, SOT-23, 分立半导体产品 二极管 - 整流器 - 单

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS