Silicon RF Switching Diodes

Silicon RF Switching Diodes ● Design for use in shunt configuration ● High shunt signal isolation ● Low shunt insertion loss

Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

Silicon RF Switching Diode • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss

Silicon RF Switching Diode

Features ●Design for use in shunt configuration ●High shunt signal isolation ●Low shunt insertion loss

Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

Silicon RF Switching Diode • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss

Silicon RF Switching Diode

Silicon RF Switching Diode ● Designed for use in shunt configuration in high performance RF switches ● High shunt signal isolation ● Low shunt insertion loss ● Optimized for short - open transformation using λ/4 lines

射频PIN型二极管

This Infineon cost optimized RF PIN diode is designed for high performance switches. Its shunt configuration results in reduces parasitic inductance and is mostly suited for high-speed switching applications. • Optimized for short - open transformation using λ/4 transmission lines\n• Reduced impact of parasitic inductance due to design\n• High shunt signal isolation ISO = 27 dB (typical) at forward current IF = 1 mA and frequency f = 1 GHz\n• Low shunt insertion loss IL = 0.17 dB (typical) at voltage VR ;

Silicon RF Switching Diode

文件：75.66 Kbytes Page：6 Pages

Silicon RF Switching Diode

文件：75.66 Kbytes Page：6 Pages

Silicon RF Switching Diode

文件：824.06 Kbytes Page：6 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE STANDAR 30V 100MW SOT343-4 分立半导体产品 二极管 - 射频

Silicon RF Switching Diode

文件：824.06 Kbytes Page：6 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE STANDAR 30V 100MW SOT343-4 分立半导体产品 二极管 - 射频