Silicon RF Switching Diode

Silicon RF Switching Diode ● Designed for use in shunt configuration in high performance RF switches ● High shunt signal isolation ● Low shunt insertion loss ● Optimized for short - open transformation using λ/4 lines

Silicon RF Switching Diode

Features ●Design for use in shunt configuration ●High shunt signal isolation ●Low shunt insertion loss

Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

Silicon RF Switching Diode • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss

射频PIN型二极管

This Infineon cost optimized RF PIN diode is designed for high performance switches. Its shunt configuration results in reduces parasitic inductance and is mostly suited for high-speed switching applications. • Optimized for short - open transformation using λ/4 transmission lines\n• Reduced impact of parasitic inductance due to design\n• High shunt signal isolation ISO = 27 dB (typical) at forward current IF = 1 mA and frequency f = 1 GHz\n• Low shunt insertion loss IL = 0.17 dB (typical) at voltage VR ;

Silicon RF Switching Diode

文件：824.06 Kbytes Page：6 Pages

Silicon RF Switching Diode

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封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE STANDAR 30V 100MW SOT343-4 分立半导体产品 二极管 - 射频

Silicon RF Switching Diode

文件：824.06 Kbytes Page：6 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE STANDAR 30V 100MW SOT343-4 分立半导体产品 二极管 - 射频