SAW Components Low-Loss Filter for Mobile Communication 897,50 MHz

Features ● Low-loss RF filter for mobile telephone EGSM system, transmit path ● Low amplitude ripple ● Usable passband 35 MHz ● Balanced to unbalanced operation ● Impedance transformation from 100 Ω to 50 Ω ● Suitable for GPRS class 1 to 12 ● Package for Surface Mounted Technology (SMT)

24-Bit 312 kSPS 109dB ADC With On-Chip Buffers Serial Interface

GENERAL DESCRIPTION The AD7764 is a high performance, 24-bit Σ-Δ analog-to-digital converter (ADC). It combines wide input bandwidth, high speed, and performance of 109 dB dynamic range at a 312 kHz output data rate. With excellent dc specifications, the converter is ideal for high speed data a

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(O

30V N-Channel PowerTrench SyncFET

General Description The FDS7764S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7764S includes an integrated Schottky diode

Ultra Low Dropout, 3.0A Adjustable Positive Linear Regulator 5962 - 0323801MYA Thru-Hole (MO-078AA)

Description The OM7764ASC is a 3.0A, ultra low dropout, adjustable linear regulator specifically designed for low voltage, high current applications. Housed in a hermetic package, the dropout of these devices is 400mV at full load. All protective features are designed into the circuit including

Ultra Low Dropout, 3.0A Adjustable Positive Linear Regulator 5962 - 0323801MYA Thru-Hole (MO-078AA)

Description The OM7764ASC is a 3.0A, ultra low dropout, adjustable linear regulator specifically designed for low voltage, high current applications. Housed in a hermetic package, the dropout of these devices is 400mV at full load. All protective features are designed into the circuit including