3.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • Surge Overload Rating to 100A Peak • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead Free Finish/RoHS Compliant (Note 1) • Green Mol

Surface Mount Schottky Barrier Rectifiers

Features: * For Surface Mount Application * Metal-Semiconductor Junction With Guardring * Epitaxial Construction * Very Low Forward Voltage Drop * High Current Capability * Plastic Meterial Has UL Flammability Classification 94V-0 * For Use In Low , And Polarity Protection Applications

Surface Mount Schottky Barrier Rectifiers

Features: * For Surface Mount Application * Metal-Semiconductor Junction With Guardring * Epitaxial Construction * Very Low Forward Voltage Drop * High Current Capability * Plastic Meterial Has UL Flammability Classification 94V-0 * For Use In Low , And Polarity Protection Applications

Schottky

3.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件：217.77 Kbytes Page：3 Pages

3.0 AMPS. Surface Mount Schottky Barrier Rectifiers

Features ◇ For surface mounted application ◇ Easy pick and place ◇ Metal to silicon rectifier, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low VF ◇ High surge current capability ◇ Plastic material used carriers Underwriters Laboratory Classificat

Surface Mount Schottky Barrier Rectifiers

Features: * For Surface Mount Application * Metal-Semiconductor Junction With Guardring * Epitaxial Construction * Very Low Forward Voltage Drop * High Current Capability * Plastic Meterial Has UL Flammability Classification 94V-0 * For Use In Low , And Polarity Protection Applications *

3.0A SCHOTTKY BARRIER RECTIFIER

The schottky rectifier providing low VF and excellent reverse leakage stability at high temperatures, this device is ideal for use in general rectification applications. Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation\nReduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.\nLead-Free Finish; RoHS Compliant\nHalogen and Antimony Free. “Green” Device;

丝印代码：B3XXBE；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

丝印代码：B3XXCE；3.0A SCHOTTKY BARRIER RECTIFIER

Features  Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation  Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F

3A 90V Schottky diode

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3A 90V Schottky diode

文件：394.009 Kbytes Page：2 Pages

3A 90V Schottky diode

文件：314.653 Kbytes Page：2 Pages

SAW filters for mobile communications

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FILTER SAW 滤波器 SAW 滤波器

包装：盒 描述：SAMPLE KIT FOR WIRELESS AMI 套件 EMI，滤波器套件

3.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件：217.77 Kbytes Page：3 Pages

SAW RF filter Short range devices

文件：63.95 Kbytes Page：7 Pages

SAW RF filter Short range devices

文件：73.53 Kbytes Page：7 Pages

SAW RF filter Short Range Devices

文件：71.92 Kbytes Page：7 Pages

SAW RF filter Automotive telematics

文件：65.11 Kbytes Page：6 Pages

3.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件：293.11 Kbytes Page：4 Pages

3.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件：293.11 Kbytes Page：4 Pages

Phase Control SCR 450 Amperes Average 2400 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak (Pow-R-Disc) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermetic Packaging □

Silicon Complementary Transistors General Purpose

Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: ● 10A Collector Current ● Low Leakage Current: ICEO = 0.7mA @ VCE = 60V ● Excellent DC Gain: hFE = 4

LM390 1W Battery Operated Audio Power Amplifier

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LM390 1W Battery Operated Audio Power Amplifier

文件：162.58 Kbytes Page：6 Pages

Silicon planar type

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