N-Channel 100-V (D-S) MOSFET

General Description B15N10D/F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED backlighting. Features
RD

N-Channel 100-V (D-S) MOSFET

MOSFET

14.7A, 100V (D-S) N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 15N10is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC 15N10is suitable for high efficiency switching DC/DC converter, LCD display inverter and l

N-Channel Enhancement Mode Power MOSFET

Description The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. Application Battery switch DC/DC converter

P-Channel 30 V (D-S) MOSFET

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N-Channel 100 V (D-S) MOSFET

文件：1.0134 Mbytes Page：7 Pages

100V N-Channel Power MOSFET

文件：1.11304 Mbytes Page：8 Pages