1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automatic Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 70A Peak • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection App

Surface Mount Schottky Barrier Diodes

Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability * Plastic Material Has UL Flammability Classification 94V-0 * For Use in, High Frequency Inverters, Free Wheeling, and Polarity Pro

Surface Mount Schottky Barrier Diodes

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N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET II POWER MOSFET

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP