Low VF Surface Mount Schottky Barrier Rectifiers

Features: * Low profile package * Ideal for automated placement * Guard Ring for over voltage protection * Low forward voltage drop * Component in accordance to RoHS 2002/95/EC

Surface Mount Schottky Barrier Rectifiers

Features: * Low profile package * Ideal for automated placement * Guard Ring for over voltage protection * Low forward voltage drop * Component in accordance to RoHS 2002/95/EC

LO VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE - 20 TO 40 VOLTS CURRENT - 1.0 AMPERES FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • For surface mount applications • Low profile package • Built-in strain relief • Metal to silicon rectifier, majority carrier conduction • Low power l

1A 40V Schottky diode

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1A 40V Schottky diode

文件：288.536 Kbytes Page：2 Pages

萧特基二极体 - Surface Mount Rectifiers

Schottky 

Low VF Surface Mount Schottky Barrier Rectifiers

Features: * Low Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Very Low Forward Voltage Drop * High Current Capability * Plastic Material Has UL Flammability Classification 94V-0 * For Use in Low Voltage, High Frequency Inverters, Free

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Low Leakage Current • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automated Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 45A Peak • Lead Free, RoHS Compliant (Note 1) • Green Molding Compound (No Halogen and Antimony) (Note 2

丝印代码：B2；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

丝印代码：L2；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

丝印代码：L2；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

丝印代码：L4；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

丝印代码：L2；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

Trench Schottky Diodes

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP