Surface Mount Schottky Barrier Rectifiers

Features: * Low profile package * Ideal for automated placement * Guard Ring for over voltage protection * Low forward voltage drop * Component in accordance to RoHS 2002/95/EC

Low VF Surface Mount Schottky Barrier Rectifiers

Features: * Low profile package * Ideal for automated placement * Guard Ring for over voltage protection * Low forward voltage drop * Component in accordance to RoHS 2002/95/EC

LO VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE - 20 TO 40 VOLTS CURRENT - 1.0 AMPERES FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • For surface mount applications • Low profile package • Built-in strain relief • Metal to silicon rectifier, majority carrier conduction • Low power l

1A 40V Schottky diode

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1A 40V Schottky diode

文件：288.536 Kbytes Page：2 Pages

萧特基二极体 - Surface Mount Rectifiers

Schottky 

Low VF Surface Mount Schottky Barrier Rectifiers

Features: * Low Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Very Low Forward Voltage Drop * High Current Capability * Plastic Material Has UL Flammability Classification 94V-0 * For Use in Low Voltage, High Frequency Inverters, Free

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Low Leakage Current • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automated Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 45A Peak • Lead Free, RoHS Compliant (Note 1) • Green Molding Compound (No Halogen and Antimony) (Note 2

1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

Trench Schottky Diodes

1/2 (12.7 mm) Single - Turn Wirewound Bushing Mount Type Precision Potentiometer

FEATURES • Ohmic value range: 50  up to 20 k • Smallest size available: 12.7 mm • Mechanical stops on request • High torque and sealed versions available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

THREADED INSERT, BLIND, REGULAR HEAD STYLE MEDIUM DUTY

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Mechanical stops on request

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Temperature Sensors Line Guide

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