High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. General features ■ Improved specification: Lower leakage current, Tighte

High voltage fast-switching NPN power transistor

Series 8 Elevator Socket w/Collet Contacts & Solder Pin Tails

Series 8 Elevator Socket w/Collet Contacts & Solder Pin Tails FEATURES • Ideal for Elevating Devices (Displays, Switches, etc.) to Desired Level with 0.260 to 1.250 [6.60 to 31.75] Height Extension

NPN Silicon Transistor

NPN Silicon Transistor for high voltage, high-speed power switching application

Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 8 A Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch Power Supply

Socket Outlets

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