丝印代码：B10G；Transient Voltage Suppression Diodes

丝印代码：B10G；TVS Diode Products

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LDMOS 2-stage integrated Doherty MMIC

Features and benefits  Integrated input splitter  Integrated output combiner  Source impedance 50   Pre-matched output  High efficiency by asymmetric Doherty design  Designed for large RF and instantaneous bandwidth operation, covering frequency from 2300 MHz to 2700 MHz  Independe

LDMOS 2-stage integrated Doherty MMIC

Features and benefits  Integrated input splitter  Integrated output combiner  Source impedance 50   Pre-matched output  High efficiency by asymmetric Doherty design  Designed for large RF and instantaneous bandwidth operation, covering frequency from 2300 MHz to 2700 MHz  Independe

LDMOS 3-stage integrated Doherty MMIC

General description The B10G3438N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device

LDMOS 3-stage integrated Doherty MMIC

General description The B10G3438N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device

LDMOS 3-stage integrated Doherty MMIC

General description The B10G3741N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device

LDMOS 3-stage integrated Doherty MMIC

General description The B10G3741N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device

LDMOS 3-stage integrated Doherty MMIC

Features and benefits  Integrated input splitter  Integrated output combiner  Very high efficiency  Designed for broadband operation (frequency 4700 MHz to 5000 MHz)  Independent control of carrier and peaking bias  Integrated ESD protection  Excellent thermal stability  High power

LDMOS 3-stage integrated Doherty MMIC

Features and benefits  Integrated input splitter  Integrated output combiner  Very high efficiency  Designed for broadband operation (frequency 4700 MHz to 5000 MHz)  Independent control of carrier and peaking bias  Integrated ESD protection  Excellent thermal stability  High power

LDMOS 3-stage integrated Doherty MMIC

Features and benefits  Integrated input splitter  Integrated output combiner  Very high efficiency  Designed for broadband operation (frequency 4700 MHz to 5000 MHz)  Independent control of carrier and peaking bias  Integrated ESD protection  Excellent thermal stability  High power

LDMOS 3-stage integrated Doherty MMIC

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：B10G3438N55DZ/REELDP 分立半导体产品 晶体管 - FET，MOSFET - 射频

LDMOS 3-stage integrated Doherty MMIC

封装/外壳：20-QFN 裸露焊盘 包装：托盘 描述：IC 28V LDMOS RF SOT1462-1 分立半导体产品 晶体管 - FET，MOSFET - 射频

LDMOS 3-stage integrated Doherty MMIC