General Description

The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD608 is Pb-free (meets ROHS & Sony 259 specifications).

Features

n-channel p-channel

VDS (V) = 40V -40V

ID = 10A (VGS=10V) -10A (V GS = -10V)

RDS(ON) RDS(ON)

< 39 mΩ (VGS=10V) < 51 mΩ (VGS = -10V)

ESD rating: 3000V (HBM)