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AO8808中文资料

厂家型号

AO8808

文件大小

112.07Kbytes

页面数量

4

功能描述

Dual N-Channel Enhancement Mode Field Effect Transistor

数据手册

下载地址一下载地址二到原厂下载

生产厂商

AOSMD

AO8808数据手册规格书PDF详情

General Description

The AO8808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. Standard Product AO8808 is Pb-free (meets ROHS & Sony 259 specifications). AO8808L is a Green Product ordering option. AO8808 and AO8808L are electrically identical.

Features

VDS (V) = 20V

ID = 8A (VGS = 10V)

RDS(ON) < 14mΩ (VGS = 10V)

RDS(ON) < 15mΩ (VGS = 4.5V)

RDS(ON) < 20mΩ (VGS = 2.5V)

RDS(ON)

AO8808产品属性

  • 类型

    描述

  • 型号

    AO8808

  • 制造商

    AOSMD

  • 制造商全称

    Alpha & Omega Semiconductors

  • 功能描述

    Dual N-Channel Enhancement Mode Field Effect Transistor

更新时间:2026-2-17 8:41:00
供应商 型号 品牌 批号 封装 库存 备注 价格
AOSMD
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8-TSSOP
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2024+
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