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P320DB90VI中文资料

厂家型号

P320DB90VI

文件大小

941.76Kbytes

页面数量

49

功能描述

32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory

32 Megabit(2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

AMD

P320DB90VI数据手册规格书PDF详情

GENERAL DESCRIPTION

The Am29PL320D is a 32 Mbit, 3.0 Volt-only page mode Flash memory device organized as 2,097,152 words or 1,048,576 double words. The device is offered in an 84-ball FBGA package. The word-wide data (x16) appears on DQ15–DQ0; the double wordwide (x32) data appears on DQ31–DQ0. The device is available in both top and bottom boot versions. This device can be programmed in-system or with in standard EPROM programmers. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations.

ARCHITECTURAL ADVANTAGES

■ 32 Mbit Page Mode device

— Word (16-bit) or double word (32-bit) mode

selectable via WORD# input

— Page size of 8 words/4 double words: Fast page

read access from random locations within the

page

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

■ Flexible sector architecture

— Sector sizes (x16 configuration): One 16 Kword,

two 8 Kword, one 96 Kword and fifteen 128

Kword sectors

— Supports full chip erase

■ SecSi™ (Secured Silicon) Sector region

— Current version of device has 512 words (256

double words); future versions will have 128

words (64 double words)

■ Top or bottom boot block configuration

■ Manufactured on 0.23 µm process technology

■ 20-year data retention at 125°C

■ Minimum 1 million erase cycles guarantee

per sector

PERFORMANCE CHARACTERISTICS

■ High performance read access times

— Page access times as fast as 20 ns

— Random access times as fast as 60 ns

■ Power consumption (typical values)

— Initial page read current: 4 mA (1 MHz),

40 mA (10 MHz)

— Intra-page read current: 15 mA (10 MHz),

50 mA (33 MHz)

— Program/erase current: 25 mA

— Standby mode current: 2 µA

SOFTWARE FEATURES

■ Software command-set compatible with JEDEC

standard

— Backward compatible with Am29F and Am29LV

families

■ CFI (Common Flash Interface) compliant

— Provides device-specific information to the

system, allowing host software to easily

reconfigure for different Flash devices

■ Unlock Bypass Program Command

— Reduces overall programming time when

issuing multiple program command sequences

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

HARDWARE FEATURES

■ Sector Protection

— A hardware method of locking a sector to prevent

any program or erase operations within that

sector

— Sectors can be locked via programming

equipment

— Temporary Sector Unprotect command

sequence allows code changes in previously

locked sectors

■ ACC (Acceleration) input provides faster

programming times

■ WP# (Write Protect) input

— At VIL, protects the first or last 32 Kword sector,

regardless of sector protect/unprotect status

— At VIH, allows removal of sector protection

— An internal pull up to VCC is provided

■ Package Options

— 84-ball FBGA

P320DB90VI产品属性

  • 类型

    描述

  • 型号

    P320DB90VI

  • 制造商

    AMD

  • 制造商全称

    Advanced Micro Devices

  • 功能描述

    32 Megabit(2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory

更新时间:2025-10-15 15:30:00
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