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AM28F010-150FIB中文资料

厂家型号

AM28F010-150FIB

文件大小

492.15Kbytes

页面数量

35

功能描述

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

1 Megabit(128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

AMD

AM28F010-150FIB数据手册规格书PDF详情

GENERAL DESCRIPTION

The Am28F010 is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F010 is erased when shipped

from the factory.

DISTINCTIVE CHARACTERISTICS

■ High performance

— 70 ns maximum access time

■ CMOS Low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

■ 10,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ±5

■ Latch-up protected to 100 mA from –1 V to VCC +1 V

■ Flasherase™ Electrical Bulk Chip-Erase

— One second typical chip-erase

■ Flashrite™ Programming

— 10 µs typical byte-program

— Two seconds typical chip program

■ Command register architecture for microprocessor/microcontroller compatible write interface

■ On-chip address and data latches

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ Automatic write/erase pulse stop timer

AM28F010-150FIB产品属性

  • 类型

    描述

  • 型号

    AM28F010-150FIB

  • 制造商

    AMD

  • 制造商全称

    Advanced Micro Devices

  • 功能描述

    1 Megabit(128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

更新时间:2025-10-8 17:28:00
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AMD
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