MINIATURE GENERAL PURPOSE RELAY

FEATURES • Rugged construction for high reliability • Life expectancy greater than 100 million operations • DC coils to 115 V • Power consumption as low as 25 mW per pole available • Current sensitive and voltage sensitive coils available • Round core and large coil volume provide greater pu

Transient Voltage Suppressing Device For ESD/Transient Protection

Features
ESD Protect for 1 Line with Bi-directional
Provide ESD protection for the protected line to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
Suitable for, 100V and below, operation voltage applications.
Small SOT23-3L package saves board space
Protect one I/O line or one p

Transient Voltage Suppressing Device For ESD/Transient Protection

Features
ESD Protect for 1 Line with Bi-directional
Provide ESD protection for the protected line to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
Suitable for, 100V and below, operation voltage applications.
Small SOT23-3L package saves board space
Protect one I/O line or one p

Transient Voltage Suppressing Device Tiny Pacakge for ESD/Transient Protection

Features
ESD Protect for 1 Line with Bi-directional
Provide ESD protection for the protected line to IEC 61000-4-2 (ESD) ±30kV (air/contact) IEC 61000-4-4 (EFT) 60A (5/50ns) IEC 61000-4-5 (Lightning) 5A (8/20μs) Cable Discharge Event (CDE)
Suitable for, 8V and below, operating voltage

Transient Voltage Suppressing Device Tiny Pacakge for ESD/Transient Protection

Features
ESD Protect for 1 Line with Bi-directional
Provide ESD protection for the protected line to IEC 61000-4-2 (ESD) ±30kV (air/contact) IEC 61000-4-4 (EFT) 60A (5/50ns) IEC 61000-4-5 (Lightning) 5A (8/20μs) Cable Discharge Event (CDE)
Suitable for, 8V and below, operating voltage

Transient Voltage Suppressing Device Tiny Package for ESD/Transient

封装/外壳：0402（1006 公制） 包装：卷带（TR）剪切带（CT） 描述：TVS DEVICE HIGH VOLTAGE 1-CH 8V 电路保护 TVS - 二极管

Tiny Package TVS

NPN Silicon RF Transistor

DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It reaches perform

SURFACE MOUNT FUSES

Features • Heat resistant ceramic housing • For line or low voltage applications • Low voltage drop • Internationally approved • High pulse resistance • Also available as holder system 425 with mounted fuse 420

Supporting the Intel Celeron processor

文件：1.3709 Mbytes Page：100 Pages

Celeron M Processor on 65 nm Process

文件：1.93023 Mbytes Page：71 Pages

420 LED wire-to-board connector

文件：307.61 Kbytes Page：1 Pages