Automation Controls Catalog

FEATURES 1. Space-saving (3.6 mm widthwise) Smaller compared to F4 series (40 pin contacts): Socket — 27 smaller, Header — 38 smaller 2. Strong resistance to adverse environments! Utilizes “TOUGH CONTACT” construction for high contact reliability. 3. Simple lock structure prov

Narrow pitch connectors (0.4mm pitch) Space-saving (3.6 mm widthwise)

文件：304.45 Kbytes Page：11 Pages

包装：卷带（TR）剪切带（CT） 描述：CONN SOCKET 64POS SMD GOLD 连接器，互连器件 阵列，边缘型，夹层式（板对板）

NARROW-PITCH, THIN AND SLIM CONNECTOR FOR BOARD-TO-FPC CONNECTION

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T-1 3/4 PACKAGE SOLID STATE LAMP

Description The MVL-564B, a blue source color device, is made with InGaN ( on SiC substrate) LED die. The package is T-1 3/4( 5mm) water clear plastic lens package. Features High performance - 2.5mW (470nm) Superior SiC substrate technology Excellent chip to chip consistency Hi

T-1 3/4 ( f5mm) InGaN LED LAMPs

Description The MVL-564BG, a blue source color device, is made with InGaN ( on SiC substrate) LED die. The package is T-1 3/4 (5mm) water clear plastic lens package. Features High performance - 2.5mW (490nm) Superior SiC substrate technology Excellent chip to chip consistency H

T-1 3/4 PACKAGE SOLID STATE LAMP

Description The MVL-564BV, a blue source color device, is made with GaN ( on SiC substrate) LED die. The package is T-1 3/4( 5mm) water clear plastic lens package. Features High performance - 1.15mW (430nm) Superior SiC substrate technology Excellent chip to chip consistency Hi

T-1 3/4 ( f 5mm) PACKAGE SOLID STATE LAMP PRELIMINARY

Description The MVL-564SG, a green source color device, is made with InGaN ( on SiC substrate) LED die. The package is T-1 3/4 (ф5mm) water clear plastic Features • High performance - 2.0mW (505nm) • Superior SiC substrate technology • Excellent chip to chip consistency • High reliability A

T-1 3/4 ( f 5mm) PACKAGE SOLID STATE LAMP

Description The MVL-564TG, a green source color device, is made with InGaN ( on SiC substrate) LED die. The package is T-1 3/4 (ф 5mm) water clear plastic type. Features • High performance - 1.5mW (525nm) • Superior SiC substrate technology • Excellent chip to chip consistency • High reliabi