PWM Control 3A Step-Down Converter

 GENERAL DESCRIPTION AX3117/A/B consists of step down switching regulator with PWM control. The device includes a reference voltage source, oscillation circuit, error amplifier, internal PMOS and etc. AX3117/A/B provides low-ripple power, high efficiency, and excellent transient characteristics

PWM Control 3A Step-Down Converter

 GENERAL DESCRIPTION AX3117/A/B consists of step down switching regulator with PWM control. The device includes a reference voltage source, oscillation circuit, error amplifier, internal PMOS and etc. AX3117/A/B provides low-ripple power, high efficiency, and excellent transient characteristics

RF modulator IC for VCR and VDP

RF modulator IC for VCR and VDP ■Overview The AN3117S and AN3117SA are RF modulator ICs for VCR and VDP. They provide excellent high frequency characteristics by adopting the high performance RF os cillation circuit. ■Features •Excellent in higher harmonic characteristics of RF

RF modulator IC for VCR and VDP

RF modulator IC for VCR and VDP ■Overview The AN3117S and AN3117SA are RF modulator ICs for VCR and VDP. They provide excellent high frequency characteristics by adopting the high performance RF os cillation circuit. ■Features •Excellent in higher harmonic characteristics of RF

RF modulator IC for VCR and VDP

RF modulator IC for VCR and VDP ■Overview The AN3117S and AN3117SA are RF modulator ICs for VCR and VDP. They provide excellent high frequency characteristics by adopting the high performance RF os cillation circuit. ■Features •Excellent in higher harmonic characteristics of RF

Logic level TOPFET

DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package. FEATURES ● TrenchMOS output stage ● Current limiting ● Overload protection ● Overtemperature protection ● Protection latched reset by

3V 900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3