单芯片TCP/IP微处理器 内置快速以太网MAC/PHY

AX11015为全球首款将百兆以太网实体层(PHY)、媒体存取控制器(MAC)、TCP/IP加速器及闪存集成的高性能8位微控制器芯片。可针对目前应用最广泛的局域网技术提供单芯片、业界最小封装的解决方案。用于设计出高性能、低成本、低功耗、且精简的嵌入式网络应用。\n\n\n\nAX11015最适合许多成长中的应用，包括智能家电、工厂/建筑自动化、工业设备、保安系统、远程控制/监测/管理、流媒体等领域，如支付终端设备、自动贩卖机、网络摄影机、网络收音机、自动抄表、环境监控装置、网络传感器、网络UPS、串口转以太网及以太网转ZigBee桥接器。\n\n\n\nAX11015包含了Single Cyc • 微处理器\n• 内部程序和数据存储器\n• 内存管理(Buffer Management)\n• 内置 10/100M 快速以太网MAC和PHY\n• TCP/IP\n• 通信接口\n• 支持通过以太网, BOOTP和TFTP协议进行网络启动\n• 芯片内部集成振荡电路和锁相环, 外部加25MHz晶体即可工作\n• 128引脚LQFP封装, 符合RoHS规范\n• 工作温度范围：0°C to +70°C或-40°C to +85°C;

Single Chip Microcontroller with TCP/IP and 10/100M Fast Ethernet MAC/PHY

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POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. • Inverter output current capability IO (No