HIP3??Variable Attenuator 2.10-2.30 GHz

Description The AV113-12 is a current controlled variable attenuator from Alpha’s series of HIP3™ components. It is designed to meet the wide dynamic range required in IMT-2000 applications. A monolithic quadrature hybrid is teamed with a silicon PIN diode pair in a plastic surface mount package

HIP3 Variable Attenuator 2.1-2.3 GHz

Description The AV113-12 is a current controlled, variable attenuator from Skyworks series of HIP3™ components. It is designed to meet the wide dynamic range required in IMT-2000 applications. A monolithic quadrature hybrid is teamed with a silicon PIN diode pair in a plastic surface mount packag

HIP3 Variable Attenuator 2.1-2.3 GHz

Description The AV113-12 is a current controlled, variable attenuator from Skyworks series of HIP3™ components. It is designed to meet the wide dynamic range required in IMT-2000 applications. A monolithic quadrature hybrid is teamed with a silicon PIN diode pair in a plastic surface mount packag

HIP3 Variable Attenuator 2.1-2.3 GHz

Description The AV113-12 is a current controlled, variable attenuator from Skyworks series of HIP3™ components. It is designed to meet the wide dynamic range required in IMT-2000 applications. A monolithic quadrature hybrid is teamed with a silicon PIN diode pair in a plastic surface mount packag

HIP3™ Variable Attenuator 2.10-2.30 GHz

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：RF ATTENUATOR 18DB 50OHM 8SOIC RF/IF，射频/中频和 RFID 衰减器

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

文件：126.55 Kbytes Page：4 Pages

Reference Diode

文件：126.55 Kbytes Page：4 Pages