isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 195A@ TC=25℃ · Drain Source Voltage -VDSS= 40V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V APPLICATIONS · Motor Drive

汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 先进加工技术\n• 超低导通电阻\n• 175°C 的工作温度\n• 快速开关\n• 允许重复雪崩达到 Tjmax\n• 无铅，符合 RoHS\n• 通过汽车认证\n ;

HEXFET짰 Power MOSFET

文件：381.9 Kbytes Page：15 Pages

AUTOMOTIVE GRADE

文件：757.68 Kbytes Page：13 Pages

Ultra Low On-Resistance

文件：290.7 Kbytes Page：15 Pages

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 195A@ TC=25℃ · Drain Source Voltage -VDSS= 40V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V APPLICATIONS · Motor Drive

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 195A@ TC=25℃ · Drain Source Voltage -VDSS= 40V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.0mΩ(Max)@VGS= 10V APPLICATIONS · Motor Drive

汽车Q101 40V单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 汽车Q101 40V单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装\n• 优势：\n• 先进加工技术\n• 超低导通电阻\n• 175°C 的工作温度\n• 快速开关\n• 允许重复雪崩达到 Tjmax\n• 无铅，符合 RoHS\n• 通过汽车认证;

汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 7p封装

\n优势:\n• 先进加工技术\n• 超低导通电阻\n• 175°C 的工作温度\n• 快速开关\n• 允许重复雪崩达到 Tjmax\n• 无铅，符合 RoHS\n• 通过汽车认证;

HEXFET짰 Power MOSFET

VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve

HEXFET짰 Power MOSFET

文件：381.9 Kbytes Page：15 Pages

Ultra Low On-Resistance

文件：290.7 Kbytes Page：15 Pages

AUTOMOTIVE GRADE

文件：757.68 Kbytes Page：13 Pages

AUTOMOTIVE GRADE

文件：757.68 Kbytes Page：13 Pages

Ultra Low On-Resistance

文件：290.7 Kbytes Page：15 Pages

HEXFET짰 Power MOSFET

文件：381.9 Kbytes Page：15 Pages

AUTOMOTIVE GRADE

文件：360.7 Kbytes Page：11 Pages

AUTOMOTIVE GRADE

文件：360.7 Kbytes Page：11 Pages

AUTOMOTIVE GRADE

文件：757.68 Kbytes Page：13 Pages

Advanced Process Technology Ultra Low On-Resistance

文件：220.35 Kbytes Page：12 Pages

OCTAL PERIPHERAL DRIVER ARRAYS

Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or PMOS/NMOS) and the higher current/voltage requirements of lamps,

EIGHT DARLINGTON ARRAYS

Description The ULQ2801A-ULQ2804A each contain eight Darlington transistors with common emitters and integral suppression diodes for inductive loads. Each Darlington features a peak load current rating of 600 mA (500 mA continuous) and can withstand at least 50 V in the off state. Outputs may be

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages