AUIRF1405价格

参考价格:¥8.8773

型号:AUIRF1405 品牌:INTERNATIONAL 备注:这里有AUIRF1405多少钱,2026年最近7天走势,今日出价,今日竞价,AUIRF1405批发/采购报价,AUIRF1405行情走势销售排行榜,AUIRF1405报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AUIRF1405

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p

IRF

AUIRF1405

汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

INFINEON

英飞凌

AUIRF1405

Low on-resistance

文件:217.74 Kbytes Page:12 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

INFINEON

英飞凌

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv

IRF

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv

IRF

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

INFINEON

英飞凌

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

INFINEON

英飞凌

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv

IRF

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv

IRF

Ultra Low On-Resistance

文件:319.45 Kbytes Page:14 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Ultra Low On-Resistance

文件:319.45 Kbytes Page:14 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

汽车Q101 55V单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

INFINEON

英飞凌

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 7 引脚封装

INFINEON

英飞凌

Ultra Low On-Resistance

文件:253.22 Kbytes Page:13 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Advanced Process Technology

文件:253.22 Kbytes Page:13 Pages

IRF

Advanced Process Technology

文件:253.22 Kbytes Page:13 Pages

IRF

ACTIVE (DIGITAL) DELAY LINES

[RCD] Wide selection of sizes! RCD’s digital delay lines have been designed to provide precise tap delays with all the necessary drive and pick-off circuitry. All inputs and outputs are schottky-type and require no additional components to achieve specified delays. Encapsulated/molded constructi

ETCList of Unclassifed Manufacturers

未分类制造商

AC Film Capacitors Lighting

Features ■ Self-healing properties ■ Low dissipation factor ■ High insulation resisitance Construction ■ Dielectric: polypropylene film ■ Aluminium can ■ Soft polyurethan resin ■ Internal dischage resistor ■ Overpressure disconnector Typical applications For general sine wave applicat

EPCOS

爱普科斯

Four-Channel LED Backlight Driver with Integrated Boost and High Frequency Direct PWM Dimming

Features • VIN Range: 4.5V to 5.5V / 5.0V to 26.0V • LX Rated to 50V • Maximum IOUT: 120mA • Up to 92 Efficiency • High Efficiency Light-Load Mode • 4 LED Current Sinks up to 30mA/each ▪ ±2 Accuracy (21mA) ▪ ±2 Matching (21mA) • Flexible Configurations ▪ Disable or Parallel • Switching

SKYWORKS

思佳讯

Analog Multiplexers/Demultiplexers

文件:169.98 Kbytes Page:12 Pages

ONSEMI

安森美半导体

Analog Multiplexers/Demultiplexers

文件:169.98 Kbytes Page:12 Pages

ONSEMI

安森美半导体

AUIRF1405产品属性

  • 类型

    描述

  • 型号

    AUIRF1405

  • 功能描述

    MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-27 15:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
24+
TO-220
8500
原盒原盘原装正品假一罚十可开增票
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
Infineon(英飞凌)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
Infineon/英飞凌
21+
D2PAK-7
6820
只做原装,质量保证
Infineon/英飞凌
2025+
D2PAK-7
8000
IR
25+23+
TO-263
29004
绝对原装正品全新进口深圳现货
IR
2026+
TO-263
7293
原装正品,欢迎来电咨询!
IR
26+
SOT-323
86720
全新原装正品价格最实惠 假一赔百
IR
24+
TO-263
47186
郑重承诺只做原装进口现货
Infineon(英飞凌)
24+
标准封装
22048
原厂渠道供应,大量现货,原型号开票。

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