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AUIRF1405价格
参考价格:¥8.8773
型号:AUIRF1405 品牌:INTERNATIONAL 备注:这里有AUIRF1405多少钱,2025年最近7天走势,今日出价,今日竞价,AUIRF1405批发/采购报价,AUIRF1405行情走势销售排行榜,AUIRF1405报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AUIRF1405 | HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p | IRF | ||
AUIRF1405 | 汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | ||
AUIRF1405 | Low on-resistance 文件:217.74 Kbytes Page:12 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | Infineon 英飞凌 | |||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv | IRF | |||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv | IRF | |||
AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | Infineon 英飞凌 | |||
AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | Infineon 英飞凌 | |||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv | IRF | |||
HEXFET짰 Power MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv | IRF | |||
Ultra Low On-Resistance 文件:319.45 Kbytes Page:14 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Ultra Low On-Resistance 文件:319.45 Kbytes Page:14 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
汽车Q101 55V单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 | Infineon 英飞凌 | |||
55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 7 引脚封装 | Infineon 英飞凌 | |||
Ultra Low On-Resistance 文件:253.22 Kbytes Page:13 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Advanced Process Technology 文件:253.22 Kbytes Page:13 Pages | IRF | |||
Advanced Process Technology 文件:253.22 Kbytes Page:13 Pages | IRF | |||
ACTIVE (DIGITAL) DELAY LINES [RCD] Wide selection of sizes! RCD’s digital delay lines have been designed to provide precise tap delays with all the necessary drive and pick-off circuitry. All inputs and outputs are schottky-type and require no additional components to achieve specified delays. Encapsulated/molded constructi | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
AC Film Capacitors Lighting Features ■ Self-healing properties ■ Low dissipation factor ■ High insulation resisitance Construction ■ Dielectric: polypropylene film ■ Aluminium can ■ Soft polyurethan resin ■ Internal dischage resistor ■ Overpressure disconnector Typical applications For general sine wave applicat | EPCOS 爱普科斯 | |||
Four-Channel LED Backlight Driver with Integrated Boost and High Frequency Direct PWM Dimming Features • VIN Range: 4.5V to 5.5V / 5.0V to 26.0V • LX Rated to 50V • Maximum IOUT: 120mA • Up to 92 Efficiency • High Efficiency Light-Load Mode • 4 LED Current Sinks up to 30mA/each ▪ ±2 Accuracy (21mA) ▪ ±2 Matching (21mA) • Flexible Configurations ▪ Disable or Parallel • Switching | SKYWORKS 思佳讯 | |||
Analog Multiplexers/Demultiplexers 文件:169.98 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
Analog Multiplexers/Demultiplexers 文件:169.98 Kbytes Page:12 Pages | ONSEMI 安森美半导体 |
AUIRF1405产品属性
- 类型
描述
- 型号
AUIRF1405
- 功能描述
MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
22048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
IR |
24+ |
NA/ |
22800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
25+ |
TO-220 |
22800 |
原装正品,欢迎来电咨询! |
|||
INFINEON |
24+ |
TO-220 |
8500 |
原盒原盘原装正品假一罚十可开增票 |
|||
IR |
24+ |
TO220 |
5000 |
全新原装正品,现货销售 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
INFINEON/英飞凌 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON TECHNOLOGIES AG |
2118+ |
原厂封装 |
6800 |
公司现货全新原装假一罚十特价 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
AUIRF1405芯片相关品牌
AUIRF1405规格书下载地址
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AUIRF1405数据表相关新闻
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2021-9-7AUIRFN8459PBF
AUIRFN8459PBF,全新原装当天发货或门市自取0755-82732291.
2020-1-11AUIRFN8459
AUIRFN8459 ,全新原装当天发货或门市自取0755-82732291.
2020-1-11
DdatasheetPDF页码索引
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