HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET p

汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Low on-resistance

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AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improv

Ultra Low On-Resistance

文件：319.45 Kbytes Page：14 Pages

Ultra Low On-Resistance

文件：319.45 Kbytes Page：14 Pages

汽车Q101 55V单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Ultra Low On-Resistance

文件：253.22 Kbytes Page：13 Pages

Advanced Process Technology

文件：253.22 Kbytes Page：13 Pages

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 7 引脚封装

Advanced Process Technology

文件：253.22 Kbytes Page：13 Pages

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1405 is an 8 volt range variable capacitance diode designed for AM tuner applications. It contains two elements housed in the miniature SOT23-3 surface mount package. FEATURES ■ Excellent Linearity (CV Curve) ■ Large Capacitance Ratio (A = 2.10 minimum) ■ Two Diodes in a Min

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1405 is an 8 volt range variable capacitance diode designed for AM tuner applications. It contains two elements housed in the miniature SOT23-3 surface mount package. FEATURES ■ Excellent Linearity (CV Curve) ■ Large Capacitance Ratio (A = 2.10 minimum) ■ Two Diodes in a Min

Analog Multiplexers/Demultiplexers

Analog Multiplexers/Demultiplexers The MC14051B, MC14052B, and MC14053B analog multiplexers are digitally−controlled analog switches. The MC14051B effectively implements an SP8T solid state switch, the MC14052B a DP4T, and the MC14053B a Triple SPDT. All three devices feature low ON impedance a

HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER

DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving a 3000pF load in 15ns rise/fall time and has ULTRAFAST propagation delay from in

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2