INTELLIGENT POWER LOW SIDE SWITCH

文件：641.82 Kbytes Page：17 Pages

INTELLIGENT POWER LOW SIDE SWITCH

文件：641.82 Kbytes Page：17 Pages

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT） 描述：IC PWR SWITCH N-CHAN 1:1 TO220 集成电路（IC） 配电开关，负载驱动器

Automotive Q100 Intelligent Power Switch 1 Channel Low Side Driver in a TO-220AB Package

INTELLIGENT POWER LOW SIDE SWITCH

文件：641.82 Kbytes Page：17 Pages

INTELLIGENT POWER LOW SIDE SWITCH

文件：641.82 Kbytes Page：17 Pages

INTELLIGENT POWER LOW SIDE SWITCH

文件：641.82 Kbytes Page：17 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT） 描述：IC PWR SWITCH N-CHAN 1:1 D2PAK 集成电路（IC） 配电开关，负载驱动器

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1021AM BICMOS device integrates a prescaler, programmable dividers, and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES • Low phase noise

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1021M BICMOS device integrates a prescaler, programmable dividers, and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES • Low phase noise •

10-Bit, 12-Bit Binary Multiplying D/A Converter

文件：264.99 Kbytes Page：14 Pages

10-Bit, 12-Bit Binary Multiplying D/A Converter

文件：264.99 Kbytes Page：14 Pages