0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10236 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 G

0.5-12 GHz Low Noise Gallium Arsenide FET

Description The ATF-10236 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12 G

Gallium Arsenide CATV Amplifier Module

Description • 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module • RoHS Compliant Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology • Unconditionally Stable Under

Nylon PCB Supports - Imperial Spacing

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Cat.6 UTP Patch Cable

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