2-16 GHz Low Noise Gallium Arsenide FET

Description The ATF-13736 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range

2-16 GHz Low Noise Gallium Arsenide FET

2-16 GHz Low Noise Gallium Arsenide FET

Description The ATF-13736 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range

2-16 GHz Low Noise Gallium Arsenide FET

Description The ATF-13736 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range

Normal Wall Tubing (2X) Flexible, Halogen Free, Polyolefin, Heat Shrink

Application The heat shrink tubing is manufactured with modified radiation cross-linked polyolefin. The specially designed halogen-free formulation makes the tubing very flexible and shrinks at a lower temperature. Suitable for applications where temperature sensitive component’s protection, e.g.

~12째 spot beam with 3 optics

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Melody series

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