| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ATC800A | RoHS Compliant / Lead Free 文件：165.76 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
280W GaN Wideband Pulsed Power Amplifier 文件：871.73 Kbytes Page：10 Pages | RFMD 威讯联合 | | ||
120W GaN WIDEBAND POWER AMPLIFIER 文件：1.65836 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
90W GaN WIDE-BAND POWER AMPLIFIER 文件：1.91471 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
30W GaN WIDEBAND POWER AMPLIFIER 文件：1.80606 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
60W GaN WIDEBAND POWER AMPLIFIER 文件：1.83543 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
120W GaN WIDEBAND POWER AMPLIFIER 文件：1.65836 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
30W GaN WIDEBAND POWER AMPLIFIER 文件：1.80606 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
60W GaN WIDEBAND POWER AMPLIFIER 文件：1.83543 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
RoHS Compliant / Lead Free 文件：165.76 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
RoHS Compliant / Lead Free 文件：165.76 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
RoHS Compliant / Lead Free 文件：165.76 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
280W GaN Wideband Pulsed Power Amplifier 文件：871.73 Kbytes Page：10 Pages | RFMD 威讯联合 | | ||
90W GaN WIDE-BAND POWER AMPLIFIER 文件：1.91471 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
30W GaN WIDEBAND POWER AMPLIFIER 文件：1.80606 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
90W GaN WIDE-BAND POWER AMPLIFIER 文件：1.91471 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
120W GaN WIDEBAND POWER AMPLIFIER 文件：1.65836 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
120W GaN WIDEBAND POWER AMPLIFIER 文件：1.65836 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
90W GaN WIDE-BAND POWER AMPLIFIER 文件：1.91471 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
120W GaN WIDEBAND POWER AMPLIFIER 文件：1.65836 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
280W GaN Wideband Pulsed Power Amplifier 文件：871.73 Kbytes Page：10 Pages | RFMD 威讯联合 | | ||
60W GaN WIDEBAND POWER AMPLIFIER 文件：1.83543 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
30W GaN WIDEBAND POWER AMPLIFIER 文件：1.80606 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
90W GaN WIDE-BAND POWER AMPLIFIER 文件：1.91471 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
120W GaN WIDEBAND POWER AMPLIFIER 文件：1.65836 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
60W GaN WIDEBAND POWER AMPLIFIER 文件：1.83543 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
90W GaN WIDE-BAND POWER AMPLIFIER 文件：1.91471 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
120W GaN WIDEBAND POWER AMPLIFIER 文件：1.65836 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
30W GaN WIDEBAND POWER AMPLIFIER 文件：1.80606 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
60W GaN WIDEBAND POWER AMPLIFIER 文件：1.83543 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
30W GaN WIDEBAND POWER AMPLIFIER 文件：1.80606 Mbytes Page：14 Pages | RFMD 威讯联合 | | ||
280W GaN WIDE-BAND PULSED POWER AMPLIFIER 文件：745.64 Kbytes Page：10 Pages | RFMD 威讯联合 | | ||
280W GaN Wideband Pulsed Power Amplifier 文件：871.73 Kbytes Page：10 Pages | RFMD 威讯联合 | | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, | NEC 瑞萨 | | ||
NSC800TM High-Performance Low-Power CMOS Microprocessor 文件：785.95 Kbytes Page：76 Pages | NSC 国半 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATC |
16+ |
SMD |
6000 |
||||
ATC/AMERICAN |
15+ROHS |
SMD |
493900 |
原装现货优势出售/高价回收此类库存 |
|||
ATC |
23+ |
SMD |
6800 |
专注配单,只做原装进口现货 |
|||
ATC/AMERICAN |
23+ |
SMD |
85500 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
ATC800A芯片相关品牌
ATC800A规格书下载地址
ATC800A参数引脚图相关
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- bul128a
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- bu406
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- atmega
- ATD1-24
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- ATD-10
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- ATC920C
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- ATC800R
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- ATC800A560JT
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- ATC800A3R0BT
- ATC800A330JT
- ATC800A2R7BT
- ATC800A2R2BT
- ATC800A2R0BT
- ATC800A1R8BT
- ATC800A1R5BT
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- ATC800A101JT
- ATC800A100JT250XTV
- ATC800A100JT250XT
- ATC800A100JT250XI
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- ATC-7-1SLASH2
- ATC-7144-VSLASHQ
- ATC-7144-VSLASHBN
- ATC-7144-VSLASHBL
- ATC-7144-V/Q
- ATC-7144-V/BN
- ATC-7144-V/BL
- ATC-7144-V
- ATC-7144-SSLASHQ
- ATC-7144-SSLASHBN
- ATC-7144-SSLASHBL
- ATC-7144-S/Q
- ATC-7144-S/BN
- ATC-7144-S/BL
- ATC-7144-S
- ATC-7144-RSLASHQ
- ATC-7144-RSLASHBN
- ATC-7144-RSLASHBL
- ATC-7144-R/Q
- ATC-7144-R/BN
- ATC700E
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ATC800A数据表相关新闻
ATATMEL-ICE-ADPT 插座和适配器
ATATMEL-ICE-ADPT 插座和适配器 10-lead squid cable flat cble/adptr brd
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ATATMEL-ICE 硬件调试器 Atmel-ICE debugger with accessories
2023-4-24ATC2010CT-0100JN-93TR射频芯片衰减器
射频衰减器在 DC 至 5 GHz 范围内具有稳定的衰减性能，衰减值范围为 0.5 dB 至 30 dB
2023-2-24ATECC508A-MAHDA-T 安全芯片
决对公司原装现货库存,需要敬请联系曾小姐,15820796658 /QQ:1925232495
2021-6-23ATECC508A-MAHDA-T全新进口原装正品现货
ATECC508A-MAHDA-T
2021-6-2ATECC508A-SSHDA-B(原厂授权中国分销商)
主要参数： 集成电路（IC） 类型 ：验证芯片 应用: 网络和通信 安装类型 :表面贴装型 封装: 8-SOIC（0.154，3.90mm 宽）
2020-3-10
DdatasheetPDF页码索引
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