位置：首页 > IC中文资料第11207页 > ATC60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR | ETC 知名厂家 | ETC |   | |
1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR | ETC 知名厂家 | ETC | | |
2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR | ETC 知名厂家 | ETC | | |
1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR | ETC 知名厂家 | ETC | | |
N--Channel Enhancement--Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR | ETC 知名厂家 | ETC | | |
RF Power LDMOS Transistor | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
RF Power LDMOS Transistor | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
RF LDMOS Wideband Integrated Power Amplifiers | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
24V Industrial Power Supplies FEATURES • Supports 90-264 VAC / 127-370 VDC • Built-In Power Factor Correction • Protection Against Short Circuit, Overload, Overvoltage, and Over Temperature • Cooling By Free Air Convection • Robust Input/Output Terminal Connections • UL-508 Approved (E206430) • RoHS, CE, and REACH Compl | ATC | | ||
N-Channel Enhancement-Mode Lateral MOSFETs 文件：524.6 Kbytes Page：15 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
N-Channel Enhancement-Mode Lateral MOSFETs 文件：524.6 Kbytes Page：15 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
N-Channel Enhancement-Mode Lateral MOSFETs 文件：524.6 Kbytes Page：15 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
N-Channel Enhancement-Mode Lateral MOSFETs 文件：524.6 Kbytes Page：15 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
N-Channel Enhancement-Mode Lateral MOSFETs 文件：524.6 Kbytes Page：15 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFETs 文件：524.6 Kbytes Page：15 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors 文件：361.71 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors 文件：191.27 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
RF LDMOS Wideband Integrated Power Amplifiers | ETC 知名厂家 | ETC | | |
RF Power GaN Transistor | ETC 知名厂家 | ETC | | |
RF LDMOS Wideband 2-Stage Power Amplifiers | ETC 知名厂家 | ETC | | |
RF LDMOS Wideband Integrated Power Amplifiers 文件：722.98 Kbytes Page：17 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF LDMOS Wideband Integrated Power Amplifiers | ETC 知名厂家 | ETC | | |
RF LDMOS Wideband Integrated Power Amplifiers | ETC 知名厂家 | ETC | | |
RF Power GaN Transistor | ETC 知名厂家 | ETC | | |
RF Power GaN Transistor | ETC 知名厂家 | ETC | | |
RF Power LDMOS Transistor | ETC 知名厂家 | ETC | | |
RF LDMOS Wideband Integrated Power Amplifiers 文件：722.98 Kbytes Page：17 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF LDMOS Wideband Integrated Power Amplifiers | ETC 知名厂家 | ETC | | |
RF Power LDMOS Transistors 文件：985.86 Kbytes Page：21 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF LDMOS Wideband Integrated Power Amplifiers | ETC 知名厂家 | ETC | | |
Gallium Arsenide pHEMT RF Power Field Effect Transistor | ETC 知名厂家 | ETC | | |
RF Power LDMOS Transistor | ETC 知名厂家 | ETC | | |
RF Power GaN Transistor | ETC 知名厂家 | ETC | | |
RF LDMOS Wideband Integrated Power Amplifiers | ETC 知名厂家 | ETC | | |
Gallium Arsenide pHEMT RF Power Field Effect Transistor | ETC 知名厂家 | ETC | | |
RF Power GaN Transistor | ETC 知名厂家 | ETC | | |
RF Power LDMOS Transistors 文件：985.86 Kbytes Page：21 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power LDMOS Transistors 文件：1.43744 Mbytes Page：27 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF LDMOS Wideband Integrated Power Amplifiers | ETC 知名厂家 | ETC | | |
RF LDMOS Wideband 2-Stage Power Amplifiers | ETC 知名厂家 | ETC | | |
RF LDMOS Wideband Integrated Power Amplifiers | ETC 知名厂家 | ETC | | |
RF Power LDMOS Transistors 文件：1.43744 Mbytes Page：27 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF LDMOS Wideband Integrated Power Amplifiers | ETC 知名厂家 | ETC | | |
Gallium Arsenide pHEMT RF Power Field Effect Transistor | ETC 知名厂家 | ETC | | |
RF Power GaN Transistor | ETC 知名厂家 | ETC | | |
RF LDMOS Wideband Integrated Power Amplifiers | ETC 知名厂家 | ETC | | |
RF Power LDMOS Transistor | ETC 知名厂家 | ETC | |
ATC60产品属性
- 类型
描述
- 型号
ATC60
- 制造商
FREESCALE
- 制造商全称
Freescale Semiconductor, Inc
- 功能描述
N-Channel Enhancement-Mode Lateral MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATC |
24+ |
NA/ |
23490 |
原装现货,当天可交货,原型号开票 |
|||
ATC |
24+ |
SMD |
500 |
原装进口现货 |
|||
ATC |
22+ |
N/A |
20000 |
公司只做原装 品质保证 |
|||
ATC |
23+ |
SMD |
6000 |
专业配单保证原装正品假一罚十 |
|||
ATC |
1142+ |
SMD |
20240 |
原装现货支持BOM配单服务 |
|||
ATC |
22+ |
NA |
600 |
只做原装,价格优惠,长期供货。 |
|||
ATC |
22+ |
SMD |
28540 |
现货,原厂原装假一罚十! |
|||
ATC |
23+ |
SMD |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ATC |
2023+ |
SMD |
20240 |
原厂全新正品旗舰店优势现货 |
|||
ATC |
24+ |
SMD0805 |
64580 |
原装现货假一赔十 |
ATC60芯片相关品牌
ATC60规格书下载地址
ATC60参数引脚图相关
- c1000
- bul128a
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- bu406
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- bga
- bf419
- BDM
- bcm2727
- bcm
- bc01
- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- ATCN-5S
- ATCN_16
- ATCHVR
- ATC-E1
- ATC-DN
- ATC920C
- ATC900C
- ATC800R
- ATC800E
- ATC800C
- ATC800B
- ATC800A
- ATC700E
- ATC700C
- ATC700B
- ATC700A
- ATC-7
- ATC600S1R5BT250XT
- ATC600S0R7AW250XT
- ATC600S0R3BT250XT
- ATC600S
- ATC600L2R4BT200T
- ATC600L180FT200T
- ATC600L
- ATC600F220JT250XT
- ATC600F1R8BT250XT
- ATC600F180JT250XT
- ATC600F180FT250T
- ATC600F120JT250XT
- ATC600F100JT250XT
- ATC600F0R9BT250XT
- ATC600F0R5BT250XT
- ATC600F
- ATC600B8R2BT250XT
- ATC600B470BT250XT
- ATC600B3R3BT250XT
- ATC600B270BT250XT
- ATC600B200BT250XT
- ATC600B121BT250XT
- ATC-5S-E1
- ATC-5S-DN
- ATC-5S
- ATC-5RLD
- ATC-5D-E1
- ATC-5D-DN
- ATC-5D
- ATC550L
- ATC506WLSM0R47KT815T
- ATC506WLC6R0KG200B
- ATC506WLC2R0KG250B
- ATC506WLC110KG115B
- ATC504L50R0FTNCT
- ATC504L25R0FTNCT
- ATC504L2000FTNCT
- ATC504L2000FTNCFT
- ATC504L1000FTNCT
- ATC504L1000FTNCFT
- ATC504L1000FTNCFI
- ATC504L
- ATC500S100JS50XT
- ATC500S
- ATC-5
- ATC-40
- ATC-4
- ATC-35
- ATC35
- ATC-30
- ATC30
- ATC-3
- ATC-25
- ATC25
- ATC-24S
- ATC210
- ATC200B
- ATC-20
- ATC20
ATC60数据表相关新闻
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ATATMEL-ICE 硬件调试器 Atmel-ICE debugger with accessories
2023-4-24ATC2010CT-0100JN-93TR射频芯片衰减器
射频衰减器在 DC 至 5 GHz 范围内具有稳定的衰减性能，衰减值范围为 0.5 dB 至 30 dB
2023-2-24ATECC508A-MAHDA-T 安全芯片
决对公司原装现货库存,需要敬请联系曾小姐,15820796658 /QQ:1925232495
2021-6-23ATECC508A-MAHDA-T全新进口原装正品现货
ATECC508A-MAHDA-T
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主要参数： 集成电路（IC） 类型 ：验证芯片 应用: 网络和通信 安装类型 :表面贴装型 封装: 8-SOIC（0.154，3.90mm 宽）
2020-3-10
DdatasheetPDF页码索引
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