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ATC200B

Rugged Construction

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ETCList of Unclassifed Manufacturers

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RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:868.17 Kbytes Page:13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:1.19064 Mbytes Page:19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

文件:985.86 Kbytes Page:21 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

ETC

知名厂家

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

ETC

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RF Power Field Effect Transistor

文件:748.8 Kbytes Page:11 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

ETC

知名厂家

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:1.19064 Mbytes Page:19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件:748.8 Kbytes Page:11 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:1.49804 Mbytes Page:18 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

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Gallium Arsenide pHEMT RF Power Field Effect Transistor

ETC

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RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

ETC

知名厂家

RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件:1.49804 Mbytes Page:18 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Rugged Construction

文件:247.04 Kbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Rugged Construction

文件:247.04 Kbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Rugged Construction

文件:247.04 Kbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • VRRM Repetitive peak reverse voltage ........ 400/800/1200/1600V • VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No.

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A

MITSUBISHI

三菱电机

ATC200B产品属性

  • 类型

    描述

  • 型号

    ATC200B

  • 制造商

    FREESCALE

  • 制造商全称

    Freescale Semiconductor, Inc

  • 功能描述

    RF Power LDMOS Transistors

更新时间:2026-5-24 21:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ATC
24+
VQFN
7850
只做原装正品现货或订货假一赔十!
ATC
2035+
SMD
500
原装现货支持BOM配单服务
ATC
25+
20
全新原装!优势库存热卖中!
ATC
22+
原厂原封
8200
全新原装现货!自家库存!
ATC
25+
假一赔十
11000
原装正品 有挂有货 假一赔十
ATC
24+
NA
5000
全新原装正品,现货销售
ATC
25+
NA
8000
只有原装
ATC
24+
SMD
5500
长期供应原装现货实单可谈
ATC
2036+
假一赔十
146
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ATC
23+
SMD
78400
原厂授权代理,海外优势订货渠道。可提供大量库存,详

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