位置：首页 > IC中文资料第11547页 > ATC200B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ATC200B | Rugged Construction 文件：247.04 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET 2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed primarily for CW large- signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET 2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件：868.17 Kbytes Page：13 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：748.8 Kbytes Page：11 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power LDMOS Transistors | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件：1.19064 Mbytes Page：19 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power LDMOS Transistors 文件：985.86 Kbytes Page：21 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件：1.19064 Mbytes Page：19 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：748.8 Kbytes Page：11 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件：1.49804 Mbytes Page：18 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
Gallium Arsenide pHEMT RF Power Field Effect Transistor | ETC 知名厂家 | ETC | | |
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs 文件：1.49804 Mbytes Page：18 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
Rugged Construction 文件：247.04 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Rugged Construction 文件：247.04 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Rugged Construction 文件：247.04 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION | MITSUBISHI 三菱电机 | | ||
HIGH POWER SWITCHING USE NON-INSULATED TYPE HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • VRRM Repetitive peak reverse voltage ........ 400/800/1200/1600V • VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A | MITSUBISHI 三菱电机 | |
ATC200B产品属性
- 类型
描述
- 型号
ATC200B
- 制造商
FREESCALE
- 制造商全称
Freescale Semiconductor, Inc
- 功能描述
RF Power LDMOS Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATC |
24+ |
SMD |
42687 |
免费送样,账期支持,原厂直供,没有中间商赚差价 |
|||
AMERICAN TECHNICAL CERAMICS(AT |
24+ |
N/A |
60000 |
全新原装现货 |
|||
ATC |
24+ |
SMD |
1200 |
全新原装数量均有多电话咨询 |
|||
ATC |
2026+ |
SMD |
680 |
原厂原装仓库现货,欢迎咨询 |
|||
ATC |
26+ |
NA |
12000 |
原装，正品 |
|||
ATC |
2036+ |
假一赔十 |
146 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ATC |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
ATC |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
ATC |
2035+ |
SMD |
500 |
原装现货支持BOM配单服务 |
|||
ATC/AMERICAN |
15+Rohs |
SMD |
493900 |
原装现货优势出售/高价回收此类库存 |
ATC200B规格书下载地址
ATC200B参数引脚图相关
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- bcm2727
- bcm
- bc01
- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- ATC600S
- ATC600L
- ATC600F
- ATC-5S
- ATC-5D
- ATC550L
- ATC504L
- ATC500S
- ATC-5
- ATC-40
- ATC-4
- ATC-35
- ATC35
- ATC-30
- ATC30
- ATC-3
- ATC-25
- ATC25
- ATC-24S
- ATC24186S
- A-TC24186F
- ATC24186F
- A-TC24184S
- ATC24184S
- A-TC24184F
- ATC24184F
- ATC2225X7R105KL4AT
- ATC210-48D12-03J
- ATC210
- ATC-20RLD
- ATC-20BC
- ATC206X104KL2AT
- ATC200B562KW50T
- ATC200B393KT50XT
- ATC200B203KT50XT
- ATC200B104MPX
- ATC200B104MP50X
- ATC200B104KP50
- ATC200B103KT50XT
- ATC200A56MW50XT
- ATC200A56MW50XI
- ATC200A
- ATC-20
- ATC20
- ATC-2
- ATC2
- ATC18RHA_08
- ATC18RHA
- ATC18M
- ATC180041J
- ATC180041
- ATC-18004
- ATC18004
- ATC180031J
- ATC180031
- ATC18003
- ATC18002
- ATC18001
- ATC18_06
- ATC18
- ATC-15S
- ATC-15D
- ATC-15
- ATC13
- ATC-12S
- ATC-12D
- ATC111
- ATC100E
- ATC100C
- ATC100B
- ATC100A
- ATC-10
- ATC-1
- ATC_16
- ATB3225
ATC200B数据表相关新闻
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决对公司原装现货库存,需要敬请联系曾小姐,15820796658 /QQ:1925232495
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主要参数： 集成电路（IC） 类型 ：验证芯片 应用 ：网络和通信 安装类型： 表面贴装型 封装 ：8-SOIC（0.154，3.90mm 宽）
2020-3-10
DdatasheetPDF页码索引
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