硅调谐器芯片

ATBM253是一款支持所有地面和有线电视标准的硅调谐器芯片。不需要外置LNA，Balun等器件，支持RF和IF AGC增益自动控制，可以节省BOM成本。支持有源射频环出功能，可用于需要射频环出功能的机顶盒产品。 • 支持所有地面和有线电视标准。\n   - PAL, NTSC, SECAM\n   - ITU-T J.83 Annex A, B, C\n   - DTMB\n   - DVB-T2/T/C2/C\n   - ATSC 3.0/ATSC/QAM\n   - ISDB-T\n• 42~1002MHz输入范围\n• 1.7MHz, 5MHz, 6MHz, 7MHz, 8MHz输出带宽\n• 支持Active RF loop-through功能\n• RF和IF AGC增益芯片内部自动调节\n• 支持100kHz，400kHz或更高速的I2C总线通讯\n• 3x3 QFN24 封装\n• 3.;

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)