位置：首页 > IC中文资料 > AT49HLV010
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AT49HLV010 | 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 |   | |
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | | ||
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | | ||
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | | ||
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | | ||
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | | ||
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | | ||
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | | ||
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | | ||
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | | ||
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | | ||
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | | ||
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial | Atmel 爱特梅尔 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATMEL/爱特梅尔 |
24+ |
NA/ |
67 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ATMEL |
2016+ |
TSOP |
9504 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ATMEL/爱特梅尔 |
25+ |
TSSOP86 |
67 |
原装正品,欢迎来电咨询! |
|||
Atmel |
23+ |
86-TSOPII |
39257 |
专业分销产品!原装正品!价格优势! |
|||
ATMEL |
25+ |
DIP |
18000 |
原厂直接发货进口原装 |
|||
ATMEL/爱特梅尔 |
2406+ |
1850 |
诚信经营!进口原装!量大价优! |
||||
AT |
22+ |
PLCC |
8200 |
原装现货库存.价格优势!! |
|||
AT |
23+ |
TSOP |
5000 |
专注配单,只做原装进口现货 |
|||
ADI |
23+ |
TSSOP86 |
7000 |
||||
ATMEL |
24+ |
TSSOP32 |
5650 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
AT49HLV010规格书下载地址
AT49HLV010参数引脚图相关
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2019-3-7
DdatasheetPDF页码索引
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