16-megabit(1M x 16) Secure 3-volt Only Memory

Description The AT49BV160S(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 64-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This

16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory

Description The AT49BV/LV16X(T) is a 3.0-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations. The device is

封装/外壳：64-VBGA，CSPBGA 包装：托盘 描述：IC FLASH 16MBIT PARALLEL 64CBGA 集成电路（IC） 存储器

16-megabit (1M x 16) 3-volt Only Flash Memory

Description The AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has CE and OE control signals to avoid any b

16-megabit (1M x 16) 3-volt Only Flash Memory

Description The AT49BV160D(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP package. The device has CE and OE control signals to avoid any bus contention. This

16-megabit(1M x 16) Secure 3-volt Only Memory

Description The AT49BV160S(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 64-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This