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AT29BV010A

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

AT29BV010A

1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

MICROCHIP

微芯科技

AT29BV010A

1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

文件:362.51 Kbytes Page:16 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

ATMEL

爱特梅尔

1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

文件:362.51 Kbytes Page:16 Pages

ATMEL

爱特梅尔

封装/外壳:32-LCC(J 形引线) 包装:管件 描述:IC FLASH 1MBIT PARALLEL 32PLCC 集成电路(IC) 存储器

MICROCHIP

微芯科技

封装/外壳:32-LCC(J 形引线) 包装:卷带(TR) 描述:IC FLASH 1MBIT PARALLEL 32PLCC 集成电路(IC) 存储器

MICROCHIP

微芯科技

1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

文件:362.51 Kbytes Page:16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

文件:362.51 Kbytes Page:16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

文件:362.51 Kbytes Page:16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

文件:362.51 Kbytes Page:16 Pages

ATMEL

爱特梅尔

AT29BV010A产品属性

  • 类型

    描述

  • 型号

    AT29BV010A

  • 制造商

    ATMEL

  • 制造商全称

    ATMEL Corporation

  • 功能描述

    1-Megabit(128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

更新时间:2026-3-2 9:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ATMEL
22+
TSSOP
8200
原装现货库存.价格优势!!
Atmel
23+
32-PLCC
65600
ATMEL
24+
SOP
30617
ATMEL一级代理品牌全新原装热卖
ATMEL
SOP
1070
正品原装--自家现货-实单可谈
ATMEL
25+
PLCC32
1920
普通
ATMEL
25+
TSSOP
15300
公司常备大量原装现货,可开13%增票!
ATMEL
25+
PLCC
3200
全新原装、诚信经营、公司现货销售!
ATMEL
23+
TSOP-32
12800
公司只有原装 欢迎来电咨询。
MICROCHIP/微芯
25+
PLCC
32360
MICROCHIP/微芯全新特价AT29BV010A-15JU即刻询购立享优惠#长期有货
ATMEL
2023+
TSOP
5800
进口原装,现货热卖

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