封装/外壳：32-LCC（J 形引线） 包装：盒 描述：IC FLASH 1MBIT PARALLEL 32PLCC 集成电路（IC） 存储器

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

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