64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K (8K x 8) Low-voltage Parallel EEPROM with Page Write and Software Data Protection

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

Description The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of

封装/外壳：28-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC EEPROM 64KBIT PARALLEL 28SOIC 集成电路（IC） 存储器

封装/外壳：28-TSSOP（0.465"，11.80mm 宽） 包装：管件 描述：IC EEPROM 64KBIT PARALLEL 28TSOP 集成电路（IC） 存储器

64K (8K x 8) Low Voltage CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28LV64A is a CMOS 64K non-volatile electrically Erasable PROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the address and data are

64K-Bit CMOS PARALLEL E2PROM

DESCRIPTION The CAT28LV64 is a low voltage, low power, CMOS parallel EEPROM organized as 8K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto clear and VCC power up/down write protection eliminate additional ti

64K-Bit CMOS PARALLEL EEPROM

文件：527.08 Kbytes Page：12 Pages

64K-Bit CMOS PARALLEL EEPROM

文件：527.08 Kbytes Page：12 Pages