64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection

Description The AT28C64B is a high-performance electrically-erasable and programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation

64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection

Description The AT28C64B is a high-performance electrically-erasable and programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation

64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection

Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum – 1 to 64-byte Page Write Operation • Low Power Dissipation – 40 mA Active Current – 100 μA CMOS Stan

64K (8K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles with out the need of external components. During a “byte write”, the address and data are latched internally, freeing the

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages

64K (8K x 8) CMOS EEPROM

文件：131.89 Kbytes Page：10 Pages