16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

Self-Timed Byte Write Cycle

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

16K 2K x 8 CMOS E2PROM

Description The AT28C17 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C17 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. Features • Fa

Self-Timed Byte Write Cycle

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封装/外壳：32-LCC（J 形引线） 包装：管件 描述：IC EEPROM 16KBIT PARALLEL 32PLCC 集成电路（IC） 存储器

封装/外壳：28-DIP（0.600"，15.24mm） 包装：管件 描述：IC EEPROM 16KBIT PARALLEL 28DIP 集成电路（IC） 存储器

16K (2K x 8) CMOS EEPROM

DESCRIPTION The Microchip Technology Inc. 28C17A is a CMOS 16K nonvolatile electrically Erasable PROM. The 28C17A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the address and data are latched internally, freeing the m

16K-Bit CMOS PARALLEL E2PROM

DESCRIPTION The CAT28C17A is a fast, low power, 5V-only CMOS parallel EEPROM organized as 2K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional t