Voltage Variable Absorptive Attenuator DC - 2 GHz

Description M/A-COM’s AT-259 is a GaAs MMIC voltage variable absorptive attenuator in a low cost SOT/143 4-Lead surface mount plastic package. The AT-259 is ideally suited for use where attenuation fine tuning, fast switching and very low power consumption are required. Typical applications inclu

Voltage Variable Absorptive Attenuator 12 dB, DC - 2.0 GHz

Description M/A-COM’s AT-259 is a GaAs MMIC voltage variable absorptive attenuator in a low cost SOT-143 4-Lead surface mount plastic package. The AT-259 is ideally suited for use where attenuation fine tuning, fast switching and very low power consumption are required. Typical applications incl

Voltage Variable Absorptive Attenuator 12 dB, DC-2.0 GHz

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HIGH VOLTAGE VIDEO AMPLIFIERS

DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits.

8-bit addressable latch

DESCRIPTION The 74AHC/AHCT259 are high-speed Si-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A. FEATURES • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

High Voltage Transistors

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High Voltage Transistors

文件：133.29 Kbytes Page：4 Pages