Voltage Variable Absorptive Attenuator 12 dB, DC - 2.0 GHz

Description M/A-COM’s AT-259 is a GaAs MMIC voltage variable absorptive attenuator in a low cost SOT-143 4-Lead surface mount plastic package. The AT-259 is ideally suited for use where attenuation fine tuning, fast switching and very low power consumption are required. Typical applications incl

HIGH VOLTAGE VIDEO AMPLIFIERS

DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits.

8-bit addressable latch

DESCRIPTION The 74AHC/AHCT259 are high-speed Si-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A. FEATURES • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

High Voltage Transistors

文件：133.29 Kbytes Page：4 Pages

High Voltage Transistors

文件：133.29 Kbytes Page：4 Pages