GaAs E-pHEMT CATV Amplifier

•3.2 dB NF\n•10.7 dB Gain at 500 MHz\n•24.5 dBm P1dB at 500 MHz\n•High Linearity 44.5 dBm OIP3\n•75 Ohm Input/Output Match\n•Supply (VD, volts): 5.0\n•Lead-free/Green/RoHS-compliant Package\n•Package Type: SOIC8;

Wideband Linear Push-pull Amplifier MMIC

文件：548.55 Kbytes Page：7 Pages

Wideband Linear Push-pull Amplifier MMIC

文件：906.51 Kbytes Page：11 Pages

Wideband Linear Push-pull Amplifier MMIC

文件：906.51 Kbytes Page：11 Pages

IGBT SIP MODULE Fast IGBT

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow

Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n =3.0.min) • Good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design.

NPN (B/W TV HORIZONTAL DEFLECTION OUTPUT)

B/W TV HORIZONTAL DEFLECTION OUTPUT • Collector-Base Voltage VCBO=150V • Collector Current IC=5A • Collector Dissipation PC=40W(TC=25°C)

B/W TV Horizontal Deflection Output

B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=150V • Collector Current : IC=5A • Collector Dissipation : PC=40W(TC=25°C)

NPN SILICON RF TRANSISTORS

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